AFM, XPS and RBS studies of the growth process of CdS thin films on ITO/glass substrates deposited using an ammonia-free chemical process

Mazón-Montijo, D.A.; Sotelo-Lerma, M.; Rodrı́guez-Fernández, L.; Huerta, L.

doi:10.1016/j.apsusc.2010.02.015

Cited by 49 publications

(19 citation statements)

References 27 publications

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“…The position of the peak at 405.8 eV for Cd orbital 3d 5/2 and the shape and binding energy of 161.6 and 162.8 eV for S2p 3/2 and S2p 1/2 , match the theoretical CdS values, 11 indicating that CdS was not incorporating oxygen into the films. The optical properties of the CdS films were measured using spectroscopic ellipsometry.…”

Section: -5supporting

confidence: 59%

Pinhole free thin film CdS deposited by chemical bath using a substrate reactive plasma treatment

Lisco

Abbas

Maniscalco

et al. 2013

Journal of Renewable and Sustainable Energy

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Achieving a pinhole-free CdS layer is necessary to produce high performance thin film CdTe solar cells. Pinholes in the CdS layer can compromise the efficiency of a CdTe solar cell by causing shunts. We have investigated the use of a plasma treatment of a fluorine doped tin oxide coated glass substrate (NSG TEC 15) and its effect on pinhole reduction in thin film CdS layers grown by Chemical Bath Deposition. CdS films, <100 nm thickness, were deposited on both O2/Ar plasma cleaned and conventionally cleaned substrates. We show that the O2/Ar plasma treatment of the TEC 15 substrate reduced the water contact angle from ∼55° to less than 12° indicating a substantial increase in the surface energy. The CdS deposited on the plasma treated TEC 15 was pinhole free, very smooth and homogenous in morphology and composition. Scanning electron microscopy images show that the O2/Ar plasma treatment is effective in increasing film density and grain size. Corresponding spectroscopic ellipsometry measurements show an increase in the refractive index from 2.18 to 2.43 at 550 nm wavelength.

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Section: -5supporting

confidence: 59%

Pinhole free thin film CdS deposited by chemical bath using a substrate reactive plasma treatment

Lisco

Abbas

Maniscalco

et al. 2013

Journal of Renewable and Sustainable Energy

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“…The fit parameters were the Tauc parameters and layer thicknesses. [25]. This indicates that the deposited CdS films are stoichiometric and no oxygen was incorporated into the films.…”

Section: Methodsmentioning

confidence: 87%

The structural properties of CdS deposited by chemical bath deposition and pulsed direct current magnetron sputtering

et al. 2015

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a b s t r a c t a r t i c l e i n f o Available online xxxx Keywords:Pulsed direct-current magnetron sputtering Chemical bath deposition Cadmium sulphide Thin films Film uniformity Pinhole free films Void-free films Cadmium sulphide (CdS) thin films were deposited by two different processes, chemical bath deposition (CBD), and pulsed DC magnetron sputtering (PDCMS) on fluorine doped-tin oxide coated glass to assess the potential advantages of the pulsed DC magnetron sputtering process. The structural, optical and morphological properties of films obtained by CBD and PDCMS were investigated using X-ray photoelectron spectroscopy, X-ray diffraction, scanning and transmission electron microscopy, spectroscopic ellipsometry and UV-Vis spectrophotometry. The as-grown films were studied and comparisons were drawn between their morphology, uniformity, crystallinity, and the deposition rate of the process. The highest crystallinity is observed for sputtered CdS thin films. The absorption in the visible wavelength increased for PDCMS CdS thin films, due to the higher density of the films. The band gap measured for the as-grown CBD-CdS is 2.38 eV compared to 2.34 eV for PDCMS-CdS, confirming the higher density of the sputtered thin film. The higher deposition rate for PDCMS is a significant advantage of this technique which has potential use for high rate and low cost manufacturing.

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“…The small peak at 532.86 eV was due to attribution of dissociated oxygen or chemisorption, it may also be due to the OH-species on surface. Small peaks around the binding energies of 537.5 eV was due to the O-C contaminations [23]. The intensity of region is higher than the other two regions which cross ponds to the strong bonding between them.…”

Section: (D)mentioning

confidence: 96%

Reduced electrical performance of Zn enriched ZnTe nanoinclusion semiconductors thin films for buffer layer in solar cells

Mahmood¹,

Thomas²,

Haq³

et al. 2017

J. Phys. D: Appl. Phys.

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AFM, XPS and RBS studies of the growth process of CdS thin films on ITO/glass substrates deposited using an ammonia-free chemical process

Cited by 49 publications

References 27 publications

Pinhole free thin film CdS deposited by chemical bath using a substrate reactive plasma treatment

Pinhole free thin film CdS deposited by chemical bath using a substrate reactive plasma treatment

The structural properties of CdS deposited by chemical bath deposition and pulsed direct current magnetron sputtering

Reduced electrical performance of Zn enriched ZnTe nanoinclusion semiconductors thin films for buffer layer in solar cells

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