Aging effects in GaAs electroluminescent diodes

Lanza, C.; Konnerth, K.; Kelly, C.

doi:10.1016/0038-1101(67)90109-8

Cited by 29 publications

(6 citation statements)

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“…The only assumption in this derivation is that the degradation is due entirely to the relative increase in the non-radiative current component with time. 3. Experimentally it was found that the nonradiative coefficient y increases linearly with time, with a slope which is proportional to the stress current density.…”

Section: Resultsmentioning

confidence: 96%

“…After some algebra, we obtain a relationship between AV and the fractional change in : (Y = -2c2 sinh %4)+ ejqAV/2kT -1 (7) where Ay = y-(t)-y(O), and E. indicates that the values y(O) and V(O) are used in equation (3).…”

Section: Theoretical Developmentmentioning

confidence: 99%

“…In this paper, we demonstrate an even simpler procedure based on the initial-measurement of the forward I-V characteristic.-The model is empirical in the sense that it does not involve the atomiclevel mechanism ultimately responsible for the degradation (2). It is, however, fundamental in the sense that the degradation relationship is derived as a natural consequence of the well-documented (3)(4)(5)(6) change in the I-V characteristic with time.…”

Section: Introductionmentioning

confidence: 96%

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A New Model for Light Output Degradation of Direct Band Gap Emitters

Lindquist

1980

18th International Reliability Physics Symposium

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Section: Resultsmentioning

confidence: 96%

Section: Theoretical Developmentmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 96%

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A New Model for Light Output Degradation of Direct Band Gap Emitters

Lindquist

1980

18th International Reliability Physics Symposium

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“…An extensive diode life testing program was established that enabled the effect of difl^erent processing methods on the degradation of light output to be compared [113]. Experience had indicated that growth of diodes by liquid-phase epitaxy (LPE) yielded lifetimes much longer than those obtained when junctions were prepared by diffusing Zn into n-type GaAs [114].…”

Section: Near-infrared and Visible Luminescencementioning

confidence: 99%

Semiconductors at IBM: Physics, Novel Devices, and Materials Science

Keyes

Nathan

1981

IBM J. Res. & Dev.

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Work on semiconductor physics, devices, and materials science carried on at IBM in the last twenty-five years is reviewed. Topics covered include hot electrons, inversion layers, the injection laser, electroluminescence, the Gunn effect, MESFETs, solar cells, superlattices, and amorphous materials and effects.The earliest IBM work was devoted to the theory of transport properties, primarily the Hall effect, and to the study of electron states. One significant early result was obtained by J. A. Swanson [2], who showed that the wellknown result for the saturation Hall constant R. (the Copyright IWl by International Business Machines Coiporation. Copying is permitted without payment of royalty provided that (1) each reproduction is done without alteration and (2) the Journal reference and IBM copyright notice are included on the first page. The title and abstract may be used without further permission in computer-based and other information-service systems. Permission to republish other excerpts should be obtained from the Editor. 779

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“…The object is to establish the nature of the gradual degradation process in GaAs injection lasers. While degradation in GaAs incoherent electroluminescent diodes has been investigated in detail [3], [4], laser degradation has received far less attention. In this paper we will investigate the following questions.…”

Section: Introductionmentioning

confidence: 99%