Air-stable synaptic devices based on bismuth triiodide and carbon nanotubes

Fully‐Solution‐Processed Enhancement‐Mode Complementary Metal‐Oxide‐Semiconductor Carbon Nanotube Thin Film Transistors Based on BiI3‐Doped Crosslinked Poly(4‐Vinylphenol) Dielectrics for Ultralow‐Power Flexible Electronics

“…Figures S2d and S4a, Supporting Information, display that the peak positions of I 3d 5/2 are 619.2 and 619.5 eV, respectively, which coincide with those of the BiI 3 and AgI spectrums reported in literatures. [ 41,61 ] It provides direct evidence that the work function decrease of Ag electrode is due to the appearance of AgI caused by interfacial chemical reaction. In addition, it has been reported that AlO x autoxidation layer of only ≈1–3 nm and SAMs deposition can reduce the work function of Al gate and Au electrodes, [ 2,11,62–64 ] respectively, which contributes to the V th significant adjustment of TFT devices.…”

“…The results were consistent with the reported literature. [40,41] Namely, the BiI 3 in dielectric solution of BiI 3 -ILs-c-PVP may separate partly during the spin coating process.…”

Emerging photoelectric devices for neuromorphic vision applications: principles, developments, and outlooks

“…These results indicate that this infrared optoelectronic heterojunction transistor has good prospects for self-adaptive bionic applications. In visual image perception and memory bionics, Hao et al [ 201 ] constructed an array based on optical synaptic transistors with bismuth triiodide (BiI 3 )/single-walled carbon nanotube heterojunctions. The array is excited by varying the number of light spikes, as shown in Figure 12(a) .…”

“… (a) The array based on BiI 3 /carbon nanotube optoelectronic heterojunction transistor is excited by different optical spike numbers. Reproduced by permission from [ 201 ], copyright [2022, Tsinghua University Press]. (b) The current responses of the array based on TiN x O 2-x /MoS 2 optoelectronic heterojunction memristor with different light intensities and duration time.…”

75 kbit printed indium oxide (IO)/indium gallium zinc oxide (IGZO) heterojunction photoelectric synaptic transistor arrays for an artificial visual memory system

“…Three-terminal photoelectric synaptic transistors outperform memristors regarding device stability, high photoresponse, multi-terminal operation, co-integration of different stimuli, and simultaneous signal transmission. 8 So far, various materials, such as metal oxide semiconductors, 2,9,10 carbon nanotubes, [11][12][13][14] organic semiconductors, 15,16 perovskite quantum dots, 17,18 2D materials 19,20 and hybrid perovskites, 21,22 have been researched for constructing photoelectric synaptic transistors to mimic synaptic behaviors. 23 Among these previously reported, photoelectric synaptic transistors based on metal oxide semiconductors have been extensively studied due to their inherent persistent photoconductivity (PPC) characteristic effect.…”