Al-free cladding-layer blue laser diodes with a low aspect ratio in far-field beam pattern

Abstract

c-plane GaN-based blue laser diodes (LDs) were fabricated with Al-free cladding layers (CLs) and deepened etching depth of mesa structure, so the aspect ratio of the far-field pattern (FFP) of the laser beam can be reduced to as low as 1.7, which is nearly the same as conventional AlGaInP-based red LDs. By using GaN CLs, the radiation angle of the laser beam θ⊥ is only 10.1° in the direction perpendicular to the junction plane. After forming a deeply etched mesa, the beam divergence angle parallel to the junction plane of FFP, θ//, increases from 4.9° to 5.8°. After using the modified structure, the operation voltage of LD is effectively reduced by 2 V at an injection current of 50 mA, but the threshold current value increases. The etching damage may be one of the main reasons responsible for the increase of the threshold current.

Performance Improvement of GaN Based Laser Diode Using Pd/Ni/Au Metallization Ohmic Contact

“…Metals with a high work function are chosen to achieve low resistance on p-GaN, such as Ni/Au [17][18][19], Ti/Pt/Au [20], Pd/Au [21,22], Pt/Ru [23], Pd/Pt/Au [24,25], Ni/Pd/Au [26]. Among these metal systems, ohmic contact metals based on Ni [17][18][19]26,27] and Pd [21,22,[24][25][26]28,29] are the most popular candidates for the p-type ohmic electrodes because they have better contact resistances and are compatible with the device etching processes.…”