AlGaN/GaN-based biosensor for label-free detection of biological activity

Podolska, Anna; Hool, Livia C.; Pfleger, Kevin D. G.; Mishra, Umesh K.; Parish, Giacinta; Nener, Brett

doi:10.1016/j.snb.2012.11.086

Cited by 18 publications

(6 citation statements)

References 17 publications

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“…Most studies also pointed out that the survival rate of cells on GaN is much higher than that of cells on silicon wafers, indicating superior biocompatibility of GaNbased devices. Podolska et al (44,47) Al-concentration. However, they pointed out that a thin GaN capping layer might help in the proliferation of cells, given Al-concentration seems to increase cell death ratio.…”

Section: Biocompatibility and Stability Of Iii-nitrides Biosensorsmentioning

confidence: 99%

Electronic Biosensors Based on III-Nitride Semiconductors

Kirste

Rohrbaugh²,

Bryan³

et al. 2015

Annual Rev. Anal. Chem.

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We review recent advances of AlGaN/GaN high-electron-mobility transistor (HEMT)-based electronic biosensors. We discuss properties and fabrication of III-nitride-based biosensors. Because of their superior biocompatibility and aqueous stability, GaN-based devices are ready to be implemented as next-generation biosensors. We review surface properties, cleaning, and passivation as well as different pathways toward functionalization, and critically analyze III-nitride-based biosensors demonstrated in the literature, including those detecting DNA, bacteria, cancer antibodies, and toxins. We also discuss the high potential of these biosensors for monitoring living cardiac, fibroblast, and nerve cells. Finally, we report on current developments of covalent chemical functionalization of III-nitride devices. Our review concludes with a short outlook on future challenges and projected implementation directions of GaN-based HEMT biosensors.

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Section: Biocompatibility and Stability Of Iii-nitrides Biosensorsmentioning

confidence: 99%

Electronic Biosensors Based on III-Nitride Semiconductors

Kirste

Rohrbaugh²,

Bryan³

et al. 2015

Annual Rev. Anal. Chem.

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“…As it was stated before, the biological matter in this structure (biointerface) can be represented by a list of candidates, and they can make a contact with a surface in several forms. For example, a biomolecule or living cell, [90,91] virus, [22] bacteria, [92,93] yeast, [94] fungi, [95] and others [96,97] may be represented as a single entity (left side of the figure), as well as in a form of a tissue or a mature biofilm (right side).…”

Section: A Biointerface As a Programmable Structurementioning

confidence: 99%

Tuning Microbial Activity via Programmatic Alteration of Cell/Substrate Interfaces

et al. 2021

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“…We have previously reported on Ca 2+ detection via biological mechanisms using live cells for functionalisation [26]. In this work, we report the performance of AlGaN/GaN HEMT devices functionalised by ion selective PVC-based membranes for Ca 2+ detection.…”

Section: Introductionmentioning

confidence: 97%

Ca 2+ detection utilising AlGaN/GaN transistors with ion-selective polymer membranes

Asadnia

Myers

Umana‐Membreno

et al. 2017

Analytica Chimica Acta

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We demonstrate highly selective and sensitive potentiometric ion sensors for calcium ion detection, operated without the use of a reference electrode. The sensors consist of AlGaN/GaN heterostructure-based transistor devices with chemical functionalisation of the gate area using poly (vinylchloride)-based (PVC) membranes having high selectivity towards calcium ions, Ca. The sensors exhibited stable and rapid responses when introduced to various concentrations of Ca. In both 0.01 M KCl and 0.01 M NaCl ionic strength buffer solutions, the sensors exhibited near Nernstian responses with detection limits of less than 10 M, and a linear response range between 10-10 M. Also, detection limits of less than 10 M were achieved for the sensors in both 0.01 M MgCl and 0.01 M LiCl buffer solutions. AlGaN/GaN-based devices for Ca detection demonstrate excellent selectivity and response range for a wide variety of applications. This work represents an important step towards multi-ion sensing using arrays of ion-selective field effect transistor (ISFET) devices.

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AlGaN/GaN-based biosensor for label-free detection of biological activity

Cited by 18 publications

References 17 publications

Electronic Biosensors Based on III-Nitride Semiconductors

Electronic Biosensors Based on III-Nitride Semiconductors

Tuning Microbial Activity via Programmatic Alteration of Cell/Substrate Interfaces

Ca 2+ detection utilising AlGaN/GaN transistors with ion-selective polymer membranes

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