AlGaN/GaN‐Based Optoelectronic Synaptic Devices for Neuromorphic Computing

Kai, Cuihong; Wang, Yue; Li, Xiaoping; Liu, Xiao; Zhang, Xuqing; Pi, Xiaodong; Yang, Deren

doi:10.1002/adom.202202105

Advanced Optical Materials

2023

DOI: 10.1002/adom.202202105

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AlGaN/GaN‐Based Optoelectronic Synaptic Devices for Neuromorphic Computing

Cuihong Kai

Yue Wang

Xiaoping Li³

et al.

Abstract: computing to the ultimate in-memory computing, in which different functions such as data storage and logic gates can be achieved in the same unit.

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Cited by 14 publications

References 49 publications

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Technology and Integration Roadmap for Optoelectronic Memristor

Wang,

Ilyas,

Ren

et al. 2023

Advanced Materials

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Optoelectronic memristors (OMs) have emerged as a promising optoelectronic Neuromorphic computing paradigm, opening up new opportunities for neurosynaptic devices and optoelectronic systems. These OMs possess a range of desirable features including minimal crosstalk, high bandwidth, low power consumption, zero latency, and the ability to replicate crucial neurological functions such as vision and optical memory. By incorporating large‐scale parallel synaptic structures, OMs are anticipated to greatly enhance high‐performance and low‐power in‐memory computing, effectively overcoming the limitations of the von Neumann bottleneck. However, progress in this field necessitates a comprehensive understanding of suitable structures and techniques for integrating low‐dimensional materials into optoelectronic integrated circuit platforms. This review aims to offer a comprehensive overview of the fundamental performance, mechanisms, design of structures, applications, and integration roadmap of optoelectronic synaptic memristors. By establishing connections between materials, multilayer optoelectronic memristor units, and monolithic optoelectronic integrated circuits, this review seeks to provide insights into emerging technologies and future prospects that are expected to drive innovation and widespread adoption in the near future.This article is protected by copyright. All rights reserved

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Technology and Integration Roadmap for Optoelectronic Memristor

Wang,

Ilyas,

Ren

et al. 2023

Advanced Materials

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Superior AlGaN/GaN‐Based Phototransistors and Arrays with Reconfigurable Triple‐Mode Functionalities Enabled by Voltage‐Programmed Two‐Dimensional Electron Gas for High‐Quality Imaging

Zhang,

Liang,

Yang

et al. 2024

Advanced Materials

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High‐quality imaging units are indispensable in modern optoelectronic systems for accurate recognition and processing of optical information. To fulfill massive and complex imaging tasks in digital age, devices with remarkable photoresponsive characteristics and versatile reconfigurable functions on a single device platform are in demand but remain challenging to fabricate. We report an AlGaN/GaN‐based double‐heterostructure, incorporated with a unique compositionally graded AlGaN structure to generate a channel of polarization‐induced two‐dimensional electrons that can be modulated to control electron separation, collection, and storage process in the channel of the fabricated phototransistor. As a result, when exposed to different light sources, the device shows reconfigurable multifunctional photoresponsive behaviors with superior characteristics owing to the successful programming of the 2DEGs by the combined gate and drain voltage inputs. A self‐powered mode with a responsivity over 100 A/W and a photoconductive mode with a responsivity of ∼108 A/W were achieved, with the ultimate demonstration of a 10×10 device array for imaging. More intriguingly, the device can be switched to photoelectric synapse mode, emulating synaptic functions to denoise the imaging process while prolonging the image storage capability. Demonstrating three‐in‐one operational characteristics in a single device offers a new path toward future integrated and multifunctional imaging units.This article is protected by copyright. All rights reserved

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Defect-engineering-based titanium dioxide nanowires for artificial optoelectronic synapses

Yan,

Pei,

et al. 2024

Journal of Alloys and Compounds Communications

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AlGaN/GaN‐Based Optoelectronic Synaptic Devices for Neuromorphic Computing

Abstract: computing to the ultimate in-memory computing, in which different functions such as data storage and logic gates can be achieved in the same unit.

Cited by 14 publications

References 49 publications

Technology and Integration Roadmap for Optoelectronic Memristor

Technology and Integration Roadmap for Optoelectronic Memristor

Superior AlGaN/GaN‐Based Phototransistors and Arrays with Reconfigurable Triple‐Mode Functionalities Enabled by Voltage‐Programmed Two‐Dimensional Electron Gas for High‐Quality Imaging

Defect-engineering-based titanium dioxide nanowires for artificial optoelectronic synapses

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