Algorithmic Design of CMOS LNAs and PAs for 60-GHz Radio

Analyses and techniques for phase noise reduction in CMOS Colpitts oscillator topology

“…The effectiveness of this technique for oscillators was shown in [19][20][21] where the transistors were biased close to the current density per unit of width for minimum noise figure. From the point of view of the PN analysis, an oscillator can be treated as a low-noise amplifier, needed to be noise matched to the signal source impedance, represented in this case by the tank impedance at the resonance frequency [18]. In low-noise amplifiers, the transistors should be biased with the optimum current density for minimum noise figure [17]. In oscillators, the quiescent point may vary significantly during the oscillation period, and thereby, the optimum current density for minimum PN may deviate from the dc bias current density for minimum noise figure of the transistors.…”

“…It consists of biasing an oscillator circuit topology with the optimum bias current density for minimum PN. This technique of the optimum bias current density applied to specific metrics of interest has been extensively used for the design of low-noise amplifiers with minimum noise figure and the design of power amplifiers with a maximum linearity range [17,18]. In a few cases, it has been also mentioned in achieving low PN in differential Colpitts and commonsource cross-coupled differential pair oscillators [19][20][21].…”

A Wideband Millimeter-Wave Power Amplifier With 20 dB Linear Power Gain and +8 dBm Maximum Saturated Output Power

“…The inferior isolation inherent in a simple common-source (CS) CMOS gain stage may result in parasitic oscillation when a higher PA gain is selected for a 60 GHz integrated transceiver module, or undesired feedback from the antenna to the transmitter. For example, the isolation of the CS amplifier reported in [4] is 15 dB less than the PA presented in this work. On the other hand, the CS amplifiers listed in Table III (e.g., [24]) offer similar levels of saturated output power at a supply voltage on the order of 1 V, rather than the 2 V supply used for the cascode PA.…”

“…The relevant RF power output parameters (i.e., , and in Table III) reported for some of the other PAs in [4] and [25] are higher than what is achieved by the PA developed in this work. However, it should be noted that all of the 60 GHz CMOS power amplifiers listed in the table are within approximately 2 dB (i.e., 2 dB) of 10 dBm maximum saturated output power ( ).…”

“…However, it should be noted that all of the 60 GHz CMOS power amplifiers listed in the table are within approximately 2 dB (i.e., 2 dB) of 10 dBm maximum saturated output power ( ). CMOS PAs [4], [26] listed in Table III do not develop their peak PAE at maximum output power. PAE is gain dependent, as it quantifies the ratio of power added to the signal by the amplifier to the DC power it consumes.…”