All-electrical manipulation of magnetization dynamics in a ferromagnet by antiferromagnets with anisotropic spin Hall effects

Zhang, Wei; Jungfleisch, M. Benjamin; Freimuth, Frank; Jiang, Wanjun; Sklenar, Joseph; Pearson, John; Ketterson, J. B.; Mokrousov, Yuriy; Hoffmann, A.

doi:10.1103/physrevb.92.144405

Cited by 111 publications

(88 citation statements)

References 63 publications

(75 reference statements)

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“…For the materials considered here this has been done elsewhere. 38 In this work the phenomenological torque model combined with an angular dependent study strengthens previous results 38 and points to new directions of future work. Because the two torques in Eq.…”

Section: The Classic "Two-torque" Modelsupporting

confidence: 64%

“…We recently confirmed large spin current generation from such metallic AFs, in particular PtMn, through ST-FMR experiments. 38 Furthermore, we showed that the strength of the STT in ST-FMR experiments could be controlled by utilizing different crystal structures of the same AF materials. 38 Here, we will build on this work by presenting a systematic study of the ST-FMR lineshapes as a function of the in-plane angular direction.…”

Section: Antiferromagnets: Materials Of Interestmentioning

confidence: 99%

“…38 Furthermore, we showed that the strength of the STT in ST-FMR experiments could be controlled by utilizing different crystal structures of the same AF materials. 38 Here, we will build on this work by presenting a systematic study of the ST-FMR lineshapes as a function of the in-plane angular direction. We will also present so-called "hysteresis effects" in the AF systems that are present in the STT.…”

Section: Antiferromagnets: Materials Of Interestmentioning

confidence: 99%

“…As an example, we show PtMn grown on MgO single-crystal substrates in an a-axis configuration. 38,44 The thickness of the AF layer is 10 nm, the interfacial dusting Cu layer is 1 nm, and the top Py layer is 5 nm. The dimensions of the trilayer completing the shorted CPW configuration are 90 × 20 µm 2 .…”

Section: The Classic "Two-torque" Modelmentioning

confidence: 99%

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Spin Hall effects in metallic antiferromagnets – perspectives for future spin-orbitronics

et al. 2016

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We investigate angular dependent spin-orbit torques from the spin Hall effect in a metallic antiferromagnet using the spin-torque ferromagnetic resonance technique. The large spin Hall effect exists in PtMn, a prototypical CuAu-I-type metallic antiferromagnet. By applying epitaxial growth, we previously reported an appreciable difference in spin-orbit torques for c- and a-axis orientated samples, implying anisotropic effects in magnetically ordered materials. In this work we demonstrate through bipolar-magnetic-field experiments a small but noticeable asymmetric behavior in the spin-transfer-torque that appears as a hysteresis effect. We also suggest that metallic antiferromagnets may be good candidates for the investigation of various unidirectional effects related to novel spin-orbitronics phenomena.

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Section: The Classic "Two-torque" Modelsupporting

confidence: 64%

Section: Antiferromagnets: Materials Of Interestmentioning

confidence: 99%

Section: Antiferromagnets: Materials Of Interestmentioning

confidence: 99%

Section: The Classic "Two-torque" Modelmentioning

confidence: 99%

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Spin Hall effects in metallic antiferromagnets – perspectives for future spin-orbitronics

et al. 2016

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“…The AFM-induced torques and their correlation with the exchange coupling at the FM/AFM interface could lead to novel designs of spintronic devices. After completing our work we learned about a related study on electrical manipulation of magnetization dynamics in a ferromagnet by antiferromagnets [45].…”

Section: Discussionmentioning

confidence: 99%

Electrical manipulation of ferromagnetic NiFe by antiferromagnetic IrMn

et al. 2015

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We demonstrate that an antiferromagnet can be employed for a highly efficient electrical manipulation of a ferromagnet. In our study, we use an electrical detection technique of the ferromagnetic resonance driven by an in-plane ac current in a NiFe/IrMn bilayer. At room temperature, we observe antidampinglike spin torque acting on the NiFe ferromagnet, generated by an in-plane current driven through the IrMn antiferromagnet. A large enhancement of the torque, characterized by an effective spin-Hall angle exceeding most heavy transition metals, correlates with the presence of the exchange-bias field at the NiFe/IrMn interface. It highlights that, in addition to the strong spin-orbit coupling, the antiferromagnetic order in IrMn governs the observed phenomenon.

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Colossal Gilbert Damping Anisotropy in Heusler‐Alloy Thin Films

Wang

et al. 2023

Adv Elect Materials

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Hence, it is crucial to manipulate the Gilbert damping on demand for versatile spintronic applications. Extensive efforts have been made including material optimization, [7][8][9][10][11] interface engineering, [12][13][14][15] spin torque, [16][17] and damping anisotropy. [18][19][20][21] Among these approaches, utilizing intrinsic Gilbert damping anisotropy, without requiring multiple magnetic devices or large critical current density, has attracted considerable attention. Such a method allows continuous damping manipulation via rotating the magnetization direction.Heusler compounds constitute a prominent class of magnetic materials featuring high spin polarization [22][23][24] and ultralow magnetic damping [25][26] in spintronics. Although many theoretical works [27][28][29] predict the existence of Gilbert damping anisotropy, there has been a lack of strong experimental evidence in Heusler alloys. For instance, the earlier works, such as Co 2 FeSi, [30] Co 2 MnSi, [31] and Co 2 FeAl, [25,32,33] did not provide any convincing analysis of the intrinsic damping anisotropy. At the same time, those reported effects [30][31][32][33] are too weak to develop novel functionality in spintronic devices. Hence, seeking new Heusler ingredients with significant Gilbert damping anisotropy has become a tremendous challenge. Additionally, the key mechanism behind this effect remains unexplored in Heusler alloys.In this work, we have deposited the Heusler-alloy Co 3−x Fe x Al (x = 1-2) single crystalline thin films using the molecular beam epitaxy (MBE) technique. The in-plane angular dependent ferromagnetic resonance (FMR) measurements show that the anisotropic damping exhibits fourfold symmetry and the maximal ratio of up to 1400% for the optimized sample Co 1.4 Fe 1.6 Al, which is nearly three times higher than the highest value of 420% reported in metallic ferromagnets. [34] Furthermore, according to anisotropic magnetoresistance (AMR) measurement and first-principles calculation, we ascribed such colossal anisotropy of Gilbert damping to the variation of the spin-orbit coupling (SOC). Our results help explore the larger anisotropic damping ratio in Heusler alloys and understand its mechanism for spintronic applications. Results and Discussion Anisotropic Magnetization Relaxation of Co 3−x Fe x Al FilmsHeusler alloy Co 3−x Fe x Al (x = 1-2) thin films were grown on the MgO (001) substrates by MBE. The details of structural characteristics Manipulating Gilbert damping is of critical importance in spintronic devices. Here, this work reports the damping anisotropy of Heusler-alloy Co 3−x Fe x Al single crystalline thin films using inductive ferromagnetic resonance. A colossal Gilbert damping anisotropy ratio of up to 1400%, nearly three times higher than the highest value reported among known metallic ferromagnets, is observed in the optimized sample Co 1.4 Fe 1.6 Al. The Gilbert damping anisotropy with strong fourfold symmetry is attributed to the variation of the spin-orbit coupling, which is further corroborated by the cur...

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All-electrical manipulation of magnetization dynamics in a ferromagnet by antiferromagnets with anisotropic spin Hall effects

Cited by 111 publications

References 63 publications

Spin Hall effects in metallic antiferromagnets – perspectives for future spin-orbitronics

Spin Hall effects in metallic antiferromagnets – perspectives for future spin-orbitronics

Electrical manipulation of ferromagnetic NiFe by antiferromagnetic IrMn

Colossal Gilbert Damping Anisotropy in Heusler‐Alloy Thin Films

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