All-optical control and super-resolution imaging of quantum emitters in layered materials

Kianinia, Mehran; Bradac, Carlo; Sontheimer, Bernd; Wang, Fan; Tran, Toan Trong; Nguyen, Minh; Kim, Sejeong; Xu, Zai‐Quan; Jin, Dayong; Schell, Andreas W.; Lobo, Charlene; Aharonovich, Igor; Toth, Milos

doi:10.1038/s41467-018-03290-0

Cited by 74 publications

(70 citation statements)

References 37 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…A threshold of 160 meV is very close to that expected based on the Herzberg-Teller effect, but as SPE persists for excitation at much higher energies than this, it has been concluded that both direct and indirect excitations are responsible for the polarization changes 34 . The existence of a fast decaying intermediate and a long-lived metastable state accessible from the first excited electronic state has also been proposed in another recent study 63 . Indirect absorption mechanisms supporting misalignment of emission and absorption dipoles has been envisaged in another recent study 62 .…”

Section: Absorption and Emission Dipole Polarisationmentioning

confidence: 77%

Single-photon emitters in hexagonal boron nitride: a review of progress

2020

View full text Add to dashboard Cite

This report summarizes progress made in understanding properties such as zerophonon-line energies, emission and absorption polarizations, electron-phonon couplings, strain tuning and hyperfine coupling of single photon emitters in hexagonal boron nitride. The primary aims of this research are to discover the chemical nature of the emitting centres and to facilitate deployment in device applications. Critical analyses of the experimental literature and data interpretation, as well as theoretical approaches used to predict properties, are made. In particular, computational and theoretical limitations and challenges are discussed, with a range of suggestions made to overcome these limitations, striving to achieve realistic predictions concerning the nature of emitting centers. A symbiotic relationship is required in which calculations focus on properties that can easily be measured, whilst experiments deliver results in a form facilitating mass-produced calculations.

show abstract

Section: Absorption and Emission Dipole Polarisationmentioning

confidence: 77%

Single-photon emitters in hexagonal boron nitride: a review of progress

2020

View full text Add to dashboard Cite

show abstract

“…A newer report from the same group presented more experimental and theoretical data to confirm this finding. The report of Kianinia et al presents a study of several quantum emitters with the PL and two‐laser repump technique, noticing that some of the studied cases can be attributed to various vacancy‐related defects . A sharp 4.09 eV line with two replicas separated by 0.18 eV and a broader 5.3 eV line were reported in Ref.…”

Section: Introductionmentioning

confidence: 93%

Exploring point defects in hexagonal boron‐nitrogen monolayers

Korona

Chojecki

2019

Int J of Quantum Chemistry

View full text Add to dashboard Cite

A comprehensive theoretical study of selected point defects for a monolayer of hexagonal boron nitride (h‐BN) is presented. Two‐dimensional structures were simulated through large h‐BN molecular clusters and used to examine various defects, like: atom vacancies, atom substitutions, or distortions of the hexagonal lattice. Since carbon contaminations are very common in the h‐BN technology, a particular attention has been paid to carbon impurities. The calculations of IR spectra for the doped molecular clusters reveal the presence of additional frequencies, which in many cases correspond to defect‐bound modes. In particular, when two carbon atoms are close to each other, a localized stretching CC mode of a high intensity has been found, with a frequency value of about 100‐200 cm–1 higher than for collective BN stretch frequencies. Absorption UV‐Vis spectra obtained from time‐dependent density functional theory show that the inclusion of impurities results in an emergence of several low‐energy electronic excitations, from which some are localized on a defect, while other are delocalized. Energies of these excitations are strongly dependent on the defect type, and they range from about 0.7 to 6.1 eV for the lowest excitations. Based on UV‐Vis spectra we propose several candidates which could be responsible for the experimental 4 eV color band. These defects are built from two or four adjacent carbon atoms and have the lowest excitation ranging from 3.9 to 4.8 eV, which is strongly localized on the defect.

show abstract

“…Furthermore, in the field of synthetic structures, a full integration between the labels and the materials, for example super-resolution autofluorescent materials, is desirable. To this aim, first reports using conjugated polymers [43][44][45][46][47] , fluorescent nanodiamonds 148,149 or synthetic polymers that incorporate fluorescent units in the main backbones pave the way towards material-dye integration.…”

Section: [H1] Conclusion and Perspectivesmentioning

confidence: 99%