2016
DOI: 10.1109/jstqe.2015.2440912
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All-Optical Modulation in Si Quantum Dot-Doped SiO Micro-Ring Waveguide Resonator

Abstract: The Si quantum dot doped SiO x rib waveguide based free-carrier absorption modulator with enhanced all-optical modulation depth is demonstrated by integrating with a micro-ring waveguide resonator. The micro-ring waveguide resonator with a Q-factor of 6x10 3 induces a throughput transfer function in wavelength domain, such a transmittance notch can be blue-shifted by varying the excited free-carrier density of Si-QD. When injecting the continuous-wave probe at central wavelength of the transmittance notch, the… Show more

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Cited by 3 publications
(1 citation statement)
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“…Among different mechanisms, the Si-QD embedded optoelectronic devices with strong quantum confinement effect have the most potential for signal processing beyond GHz. However, the bulk silicon also exhibits the two-photon absorption induced free-carrier absorption (FCA) effect 34 36 , which inevitably results in a recombination (or dissipation) time of ~1 ns to further limit the modulation speed. To meet this demand, nonlinear Kerr switching is proposed as an alternative to the FCA switching for implementing the ultrafast all-optical modulation 3 , 37 .…”
Section: Introductionmentioning
confidence: 99%
“…Among different mechanisms, the Si-QD embedded optoelectronic devices with strong quantum confinement effect have the most potential for signal processing beyond GHz. However, the bulk silicon also exhibits the two-photon absorption induced free-carrier absorption (FCA) effect 34 36 , which inevitably results in a recombination (or dissipation) time of ~1 ns to further limit the modulation speed. To meet this demand, nonlinear Kerr switching is proposed as an alternative to the FCA switching for implementing the ultrafast all-optical modulation 3 , 37 .…”
Section: Introductionmentioning
confidence: 99%