2018
DOI: 10.1016/j.diamond.2018.05.008
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Alpha-voltaic battery on diamond Schottky barrier diode

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Cited by 26 publications
(9 citation statements)
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“…An open-circuit voltage of 1.13 V and a short-circuit current of 53.4 pA were measured under irradiation by a low-activity 241 Am source. 64 The stable conversion efficiency under low-level irradiations and the better performances of this device with respect to the Si-and SiC-based ones confirmed the high potential of diamond-based materials.…”
Section: Alpha-voltaicsmentioning
confidence: 54%
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“…An open-circuit voltage of 1.13 V and a short-circuit current of 53.4 pA were measured under irradiation by a low-activity 241 Am source. 64 The stable conversion efficiency under low-level irradiations and the better performances of this device with respect to the Si-and SiC-based ones confirmed the high potential of diamond-based materials.…”
Section: Alpha-voltaicsmentioning
confidence: 54%
“…Significant results for diamond Schottky α‐voltaic nuclear batteries have been also obtained using oxygen‐terminated intrinsic CVD diamond layers grown on a B‐doped HPHT diamond. An open‐circuit voltage of 1.13 V and a short‐circuit current of 53.4 pA were measured under irradiation by a low‐activity 241 Am source 64 . The stable conversion efficiency under low‐level irradiations and the better performances of this device with respect to the Si‐ and SiC‐based ones confirmed the high potential of diamond‐based materials.…”
Section: Basic Concepts and Conversion Mechanismsmentioning
confidence: 78%
“…This conclusion is also consistent with the results in Bormashov et al, in which a η total of 3.6% was obtained using an alpha source of 2100 μCi/cm 2 plutonium‐238. The ŋ total of 1.41% is higher than our previous work under the same radioactive source irradiation, which is attributed to the higher intrinsic layer quality.…”
Section: Resultsmentioning
confidence: 99%
“…This is another advantage of diamond as a nuclear battery material. The degradation test of the diamond Schottky battery under the illumination of americium‐241 was performed in our previous study . Because of mature synthesis and processing technology, the conversion efficiency of silicon‐based photovoltaic devices can reach 26.7% .…”
Section: Introductionmentioning
confidence: 99%
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