Alternative resistive switching mechanism based on migration of charged counter-ions within conductive polymers

Sim, Raymond; Chan, Mei Yin; Wong, A. S. W.; Lee, Pooi See

doi:10.1016/j.orgel.2010.11.003

Cited by 17 publications

(16 citation statements)

References 13 publications

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“…Originally, the film was in its high conducting state with Ohmic behavior. Figure 1b shows the I-V sweep from 0 V to −5 V which exhibits a hysteresis where current transits from high conducting state to low conducting state which is similar with I-V hysteresis of PANI PSS 12 and PEDOT PSS observed by Bhansali et al 22 . After this sweep, read voltage at lower bias of 0.5 V shows a low conducting state.…”

Section: Resultssupporting

confidence: 79%

“…The WORM memory characteristic of PEDOT : PSS can be attributed to the modulation of dopant PSS H and redox reaction 11 . Recently, we have also shown that PSS H doped polyaniline (PANI) also demonstrated WORM memory characteristic 12 . Alongside with WORM memory, PEDOT PSS has been investigated for applications such as rewritable memory/synapsis activities 13 14 15 .…”

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confidence: 99%

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Resistive Switching Memory Phenomena in PEDOT PSS: Coexistence of Switchable Diode Effect and Write Once Read Many Memory

Nguyen

Lee

2016

Sci Rep

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We study resistive switching memory phenomena in conducting polymer PEDOT PSS. In the same film, there are two types of memory behavior coexisting; namely, the switchable diode effect and write once read many memory. This is the first report on switchable diode phenomenon based on conducting organic materials. The effect was explained as charge trapping of PEDOT PSS film and movement of proton. The same PEDOT PSS device also exhibits write once read many memory (WORM) phenomenon which arises due to redox reaction that reduces PEDOT PSS and renders it non-conducting. The revelation of these two types of memory phenomena in PEDOT PSS highlights the remarkable versatility of this conducting conjugated polymer.

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Section: Resultssupporting

confidence: 79%

mentioning

confidence: 99%

Resistive Switching Memory Phenomena in PEDOT PSS: Coexistence of Switchable Diode Effect and Write Once Read Many Memory

Nguyen

Lee

2016

Sci Rep

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“…WORM memory in PEDOT: PSS has been explained extensively as redox reactions which dedope conducting PEDOT + to non-conducting PEDOT 0 18. Furthermore, it has also been pointed out that electrochemical characteristic (including migration of PSS chains) of PEDOT: PSS also distorted the top electrode contact and PEDOT: PSS conduction pathways which resulted in suppression of electrical transport and hence gave rise to a WORM memory phenomenon1920.…”

Section: Resultsmentioning

confidence: 99%

“…WORM memory mechanism in PEDOT: PSS or related composites has been a well-known effect1920 while their memristor phenomena are still in debate or discussion212223. To gain better insight on the governing mechanisms of the memristor mode, one needs to exclude spurious effect from metallic filaments mechanism from electromigration of top or bottom electrodes.…”

Section: Resultsmentioning

confidence: 99%

Coexistence of Write Once Read Many Memory and Memristor in blend of Poly(3,4-ethylenedioxythiophene): polystyrene sulfonate and Polyvinyl Alcohol

Nguyen

Lee

2016

Sci Rep

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In this work, the coexistence of Write Once Read Many Memory (WORM) and memristor can be achieved in a single device of Poly(3,4-ethylenedioxythiophene): polystyrene sulfonate (PEDOT: PSS) and Polyvinyl Alcohol (PVA) blend organic memory system. In memristor mode, the bistable resistance states of the device can be cycled for more than 1000 times. Once a large negative bias of −8V was applied to the device, it was switched to permanent high resistance state that cannot be restored back to lower resistance states. The mechanism of the memristor effect can be attributed to the charge trapping behaviour in PVA while the WORM effect can be explained as the electrochemical characteristic of PEDOT: PSS which harnesses the percolative conduction pathways. The results may facilitate multipurpose memory device with active tunability.

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“…The presence of charged dopants in these materials can change barriers for charge injection and the charge carrier density. Migration of charged dopants under the influence of applied bias leads to memristive effects [34]. The memory functionality of the macromolecular material can be enhanced further by doping with metal ions that can also be reduced electrochemically to metal filaments.…”

Section: Dynamic Dopingmentioning

confidence: 99%

Macromolecular Memory

Bory

Meskers

2014

Emerging Nanoelectronic Devices

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Alternative resistive switching mechanism based on migration of charged counter-ions within conductive polymers

Cited by 17 publications

References 13 publications

Resistive Switching Memory Phenomena in PEDOT PSS: Coexistence of Switchable Diode Effect and Write Once Read Many Memory

Resistive Switching Memory Phenomena in PEDOT PSS: Coexistence of Switchable Diode Effect and Write Once Read Many Memory

Coexistence of Write Once Read Many Memory and Memristor in blend of Poly(3,4-ethylenedioxythiophene): polystyrene sulfonate and Polyvinyl Alcohol

Macromolecular Memory

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