2010
DOI: 10.1039/b922196d
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Ambient pressure, low-temperature synthesis and characterization of colloidal InN nanocrystals

Abstract: Highly soluble, non-aggregated colloidal wurtzite InN nanocrystals were obtained through an ambient pressure, low-temperature method followed by post-synthesis treatment with nitric acid.

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Cited by 35 publications
(60 citation statements)
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“…There are indeed efforts in this direction. InN microcrystals have been synthesized by solvothermal technique using various precursors and solvents at temperatures ranging from 240 to 280 1C [6][7][8]. However, it should be noted that most of these studies deal with the chemistry aspects of the synthesis process and a few basic characterization.…”
Section: Introductionmentioning
confidence: 99%
“…There are indeed efforts in this direction. InN microcrystals have been synthesized by solvothermal technique using various precursors and solvents at temperatures ranging from 240 to 280 1C [6][7][8]. However, it should be noted that most of these studies deal with the chemistry aspects of the synthesis process and a few basic characterization.…”
Section: Introductionmentioning
confidence: 99%
“…Even though these techniques utilize very sophisticated equipment, many difficulties have not yet been overcome due to the low decomposition temperature of InN. Recent works published on the synthesis of InN nanoparticles are based on solvothermal methods at elevated pressure and temperatures (Wu et al 2005;Xiao et al 2003), metathesis reactions (Bai et al 2002), decomposition of nitrogen-containing indium compounds (Schofield et al 2004), or reactions of sodium amide with indium halogenide at elevated temperatures (Hsieh et al 2010). The synthesis of InN nanostructures using indium oxide ammonolysis has also been reported (Schwenzer et al 2004).…”
Section: Introductionmentioning
confidence: 96%
“…Although several synthesis methods, such as solvothermal methods [24,25], sputtering [26], and molecular beam epitaxy (MBE) [27], were developed to prepare 0D InN QDs, more effort needs to be devoted to improve the quality of InN QDs with a controlled way.…”
Section: Indium Nitride Quantum Dotsmentioning
confidence: 99%
“…Hsieh [25] also used solvothermal to prepare the InN NCs with an average diameter of 6.2 AE 2.0 nm utilizing InBr 3 and NaNH 2 in a low temperature, ambient pressure, and liquidphase condition.…”
Section: Indium Nitridementioning
confidence: 99%
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