Ambipolar suppression of superconductivity by ionic gating in optimally doped 
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 ultrathin films

Piatti, Erik; Hatano, Takafumi; Daghero, Dario; Galanti, Francesco; Gerbaldi, Claudio; Guastella, S.; Portesi, C.; Nakamura, Ibuki; Fujimoto, Ryosuke; Iida, K.; Ikuta, Hiroshi

doi:10.1103/physrevmaterials.3.044801

Cited by 16 publications

(28 citation statements)

References 79 publications

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“…1 to determine α and C H . From the best fit (black dashed line), we find C H ≈ 22 µF cm −2 , a typical value for electrolyte-based gates [38,41,66], and α ≈ 0.015. For comparison, the authors in Ref.…”

Section: Discussionmentioning

confidence: 91%

“…First, in the H-(110) surface at n 2D 1 • 10 13 h + cm −2 , τ actually increases with increasing n 2D . This indicates that, at very low doping, the improved screening due to the increase in carrier density is more important than both the increase in electron-phonon scattering [25,26,42,43] and the gate-induced increase in Coulomb scattering centers [25,36,38,61,62,[71][72][73][74][75][76][77][78]. At larger doping, τ again decreases with increasing n 2D in both the H-(110) and H-(111) surfaces.…”

Section: Discussionmentioning

confidence: 97%

“…Each V G value was applied and removed multiple times to ensure the reproducibility of the measurements. Double-step chroconoulometry (DSCC), a well-established electrochemical technique [40] that allows to determine the amount of charge stored in the EDL during the charging/discharging of an EDLT [31,[36][37][38][39], was employed to determine the gate-induced hole density ∆n 2D at the diamond surface from the I G transients. The gate-induced voltage drop across the electrolyte/diamond interface was directly monitored as…”

Section: B Ionic-gate Operationmentioning

confidence: 99%

“…As expected, the H-( 111) and H-(110) surface shows very similar values of µ and similar n 2D -dependencies: As already reported in the case of ion-gated H-( 111) and H-(100) surfaces at T > 200 K [25,26], µ ∼ 100 cm 2 V −1 s −1 near V G = 0 and then rapidly decreases at the increase of n 2D . This behavior has been explained as due to a combination of the intrinsic doping dependence of acousticphonon scattering [25,26,42,43] and the gate-induced disorder caused by the ions in the EDL acting as charged scattering centers [25,36,38,61,62,[71][72][73][75][76][77][78]. The introduction of B dopants strongly suppresses µ in both diamond surfaces, but with a starkly different effectiveness.…”

Section: B Ionic-gate Operationmentioning

confidence: 99%

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Orientation-dependent electric transport and band filling in hole co-doped epitaxial diamond films

Piatti,

Pasquarelli,

Gonnelli

2020

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Diamond, a well-known wide-bandgap insulator, becomes a low-temperature superconductor upon substitutional doping of carbon with boron. However, limited boron solubility and significant lattice disorder introduced by boron doping prevent attaining the theoretically-predicted high-temperature superconductivity. Here we present an alternative co-doping approach, based on the combination of ionic gating and boron substitution, in hydrogenated thin films epitaxially grown on (111)-and (110)-oriented single crystals. Gate-dependent electric transport measurements show that the effect of boron doping strongly depends on the crystal orientation. In the (111) surface, it strongly suppresses the charge-carrier mobility and moderately increases the gate-induced doping, while in the (110) surface it strongly increases the gate-induced doping with a moderate reduction in mobility. In both cases the maximum total carrier density remains below 2•10 14 cm −2 , three times lower than the value theoretically required for high-temperature superconductivity. Density-functional theory calculations show that this strongly orientation-dependent effect is due to the specific energydependence of the density of states in the two surfaces. Our results allow to determine the band filling and doping-dependence of the hole scattering lifetime in the two surfaces, showing the occurrence of a frustrated insulator-to-metal transition in the (110) surface and of a re-entrant insulator-to-metal transition in the (111) surface.

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Section: Discussionmentioning

confidence: 91%

Section: Discussionmentioning

confidence: 97%

Section: B Ionic-gate Operationmentioning

confidence: 99%

Section: B Ionic-gate Operationmentioning

confidence: 99%

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Orientation-dependent electric transport and band filling in hole co-doped epitaxial diamond films

Piatti,

Pasquarelli,

Gonnelli

2020

Preprint

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“…In the last decade, the ionic gating technique has become a fundamental tool for probing the ground-state properties of low-dimensional systems as a function of doping. Indeed, thanks to the field-effect transistor (FET) architecture it is possible to investigate the rich phase diagrams of (quasi) two-dimensional (2D) materials and surfaces in an almost continuous way [1][2][3][4][5][6][7][8][9][10][11][12][13][14][15][16][17][18][19][20] . The transition metal dichalcogenides (TMDs) represent a notably tunable class of materials thanks to the occurrence of both superconducting (SC) and charge-density-wave (CDW) phases 21,22 .…”

Section: Introductionmentioning

confidence: 99%

Strong band-filling-dependence of the scattering lifetime in gated MoS2 nanolayers induced by the opening of intervalley scattering channels

Romanin,

Brumme,

Daghero

et al. 2020

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Gated molybdenum disulphide (MoS2) exhibits a rich phase diagram upon increasing electron doping, including a superconducting phase, a polaronic reconstruction of the bandstructure, and structural transitions away from the 2H polytype. The average time between two charge-carrier scattering events -the scattering lifetime -is a key parameter to describe charge transport and obtain physical insight in the behavior of such a complex system. In this work, we combine the solution of the Boltzmann transport equation (based on ab-initio density functional theory calculations of the electronic bandstructure) with the experimental results concerning the charge-carrier mobility, in order to determine the scattering lifetime in gated MoS2 nanolayers as a function of electron doping and temperature. From these dependencies, we assess the major sources of charge-carrier scattering upon increasing band filling, and discover two narrow ranges of electron doping where the scattering lifetime is strongly suppressed. We indentify the opening of additional intervalley scattering channels connecting the simultaneously-filled K/K and Q/Q valleys in the Brillouin zone as the source of these reductions, which are triggered by the two Lifshitz transitions induced by the filling of the high-energy Q/Q valleys upon increasing electron doping.

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Full Control of Solid‐State Electrolytes for Electrostatic Gating

et al. 2023

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Ionic gating is a powerful technique to realize field‐effect transistors (FETs) enabling experiments not possible otherwise. So far, ionic gating has relied on the use of top electrolyte gates, which pose experimental constraints and make device fabrication complex. Promising results obtained recently in FETs based on solid‐state electrolytes remain plagued by spurious phenomena of unknown origin, preventing proper transistor operation, and causing limited control and reproducibility. Here, a class of solid‐state electrolytes for gating (Lithium‐ion conducting glass‐ceramics, LICGCs) is explored, the processes responsible for the spurious phenomena and irreproducible behavior are identified, and properly functioning transistors exhibiting high density ambipolar operation with gate capacitance of ≈20 − 50 µF cm−2\[20{\bm{ - }}50\;\mu F c{m^{{\bm{ - }}2}}\] (depending on the polarity of the accumulated charges) are demonstrated. Using 2D semiconducting transition‐metal dichalcogenides, the ability to implement ionic‐gate spectroscopy to determine the semiconducting bandgap, and to accumulate electron densities above 1014 cm−2 are demostrated, resulting in gate‐induced superconductivity in MoS2 multilayers. As LICGCs are implemented in a back‐gate configuration, they leave the surface of the material exposed, enabling the use of surface‐sensitive techniques (such as scanning tunneling microscopy and photoemission spectroscopy) impossible so far in ionic‐gated devices. They also allow double ionic gated devices providing independent control of charge density and electric field.

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Ambipolar suppression of superconductivity by ionic gating in optimally doped BaFe2(As,P)2 ultrathin films

Cited by 16 publications

References 79 publications

Orientation-dependent electric transport and band filling in hole co-doped epitaxial diamond films

Orientation-dependent electric transport and band filling in hole co-doped epitaxial diamond films

Strong band-filling-dependence of the scattering lifetime in gated MoS2 nanolayers induced by the opening of intervalley scattering channels

Full Control of Solid‐State Electrolytes for Electrostatic Gating

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