AMOLED Display Technology and Applications

Kane, M.

doi:10.1002/9783527804894.ch8

Cited by 7 publications

(1 citation statement)

References 68 publications

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“…The primary reasons for their recognition are the provision of a higher contrast ratio, wider viewing angle, blur-free motion features and quicker response time as compared to LCDS [1].Lighting up a portion of AMOLED displays save power significantly as compared to LCDs, where the complete backplane is always on, leading to inefficient power performance. The AMOLED displays have led the path toward flexible displays as they are more robust than a liquid-crystal cell in terms of mechanical flexibility [2].Due to its excellent display effects, AMOLED is gradually replacing liquid crystal displays in various fields.…”

Section: Introductionmentioning

confidence: 99%

P‐2.2: Research on a Method for Optimizing Flicker of AMOLED Display Screen

Yongbin,

Zheng,

Lijun

et al. 2024

Symp Digest of Tech Papers

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In this paper, Display Driver Integrated Circuit (DDIC) is used as one adjustment platform. By adjusting output waveform of timing signal, we make each black inserting cycle in each frame of current through LIGHT‐emitting diode is consistent. Furthermore, this method can ensure the consistency of panel brightness, which also can reduce flicker phenomenon. Besides, through data segmentation and adaptive proportion fine‐tuning, the whole picture quality could be great improved. We think this method has helpful value to solve flicker problem, also has broad application prospect.

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Section: Introductionmentioning

confidence: 99%

P‐2.2: Research on a Method for Optimizing Flicker of AMOLED Display Screen

Yongbin,

Zheng,

Lijun

et al. 2024

Symp Digest of Tech Papers

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En Route to Wide Area Emitting Organic Light‐Emitting Transistors for Intrinsic Drive‐Integrated Display Applications: A Comprehensive Review

Ganesan

Tsao

Gao

2021

Adv Funct Materials

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Organic light-emitting transistors (OLET) evolved from the fusion of the switching functionality of field-effect transistors (FET) with the light-emitting characteristics of organic light-emitting diode (OLED) that can simplify the active-matrix pixel device architecture and hence offer a promising pathway for future flat panel and flexible display technology. This review systematically analyzes the key device/molecular engineering tactics that assist in improving the electrode edge narrow emission to wide-area emission for display applications via three different topics, that is, narrow to wide-area emission, vertical architecture, and impact of high-κ dielectric on the device performance. Source-drain electrode engineering such as symmetric/asymmetric, planar/ non-planar arrangement, semitransparent nature, multilayer approach comprising charge transport, and work function modification layers enable widening the emission zone. Vertical OLET architecture offers short channel lengths with a high aperture ratio, pixel type area emission, and stable lightemitting area. Transistors utilizing high-κ dielectric materials have assisted in lowering the operating voltage, enhancing luminance and air stability. The promising development in achieving wide-area emission provides a solid basis for constructing OLET research toward display applications; however, it relies on developing highly luminescent and fast charge transporting materials, suitable semitransparent source/drain electrodes, high-κ -dielectrics, and device architectural engineering.

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Tailoring Subthreshold Swing in A‐IGZO Thin‐Film Transistors for Amoled Displays: Impact of Conversion Mechanism on Peald Deposition Sequences

Yoon,

Cho,

Cho

et al. 2024

Small Methods

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Amorphous IGZO (a‐IGZO) thin‐film transistors (TFTs) are standard backplane electronics to power active‐matrix organic light‐emitting diode (AMOLED) televisions due to their high carrier mobility and negligible low leakage characteristics. Despite their advantages, limitations in color depth arise from a steep subthreshold swing (SS) (≤ 0.1 V/decade), necessitating costly external compensation for IGZO transistors. For mid‐size mobile applications such as OLED tablets and notebooks, it is important to ensure controllable SS value (≥ 0.3 V/decade). In this study, a conversion mechanism during plasma‐enhanced atomic layer deposition (PEALD) is proposed as a feasible route to control the SS. When a pulse of a diethylzinc (DEZn) precursor is exposed to the M2O3 (M = In or Ga) surface layer, partial conversion of the underlying M2O3 to ZnO is predicted on the basis of density function theory calculations. Notably, significant distinctions between In‐Ga‐Zn (Case I) and In‐Zn‐Ga (Case II) films are observed: Case II exhibits a lower growth rate and larger Ga/In ratio. Case II TFTs with a‐IGZO (subcycle ratio of In:Ga:Zn = 3:1:1) show reasonable SS values (313 mV decade−1) and high mobility (µFE) of 29.3 cm2 Vs−1 (Case I: 84 mV decade−1 and 33.4 cm2 Vs−1). The rationale for Case II's reasonable SS values is discussed, attributing it to the plausible formation of In‐Zn defects, supported by technology computer‐aided design (TCAD) simulations.

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AMOLED Display Technology and Applications

Cited by 7 publications

References 68 publications

P‐2.2: Research on a Method for Optimizing Flicker of AMOLED Display Screen

P‐2.2: Research on a Method for Optimizing Flicker of AMOLED Display Screen

En Route to Wide Area Emitting Organic Light‐Emitting Transistors for Intrinsic Drive‐Integrated Display Applications: A Comprehensive Review

Tailoring Subthreshold Swing in A‐IGZO Thin‐Film Transistors for Amoled Displays: Impact of Conversion Mechanism on Peald Deposition Sequences

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