Amorphous transition in intermetallic compounds induced by electron irradiation

Mori, Hirotarô; Fujita, Hiroshi; Tendo, M.; Fujita, Makoto

doi:10.1016/0036-9748(84)90394-6

Cited by 112 publications

(11 citation statements)

References 14 publications

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“…That Cu4Ti cannot be rendered amorphous by the introduction of Frenkel pairs is in agreement with the experimental observation which shows that this compound remained crystalline during electron irradiation [24]. On the other hand, the finding that the c-a transformation can be triggered by Frerukel pairs simultaneously produced in groups indicates that it may be possible to amorphize…”

Section: Driving Force For Amorphizationsupporting

confidence: 80%

Radiation-induced crystalline-to-amorphous transition in intermetallic compounds of the CuTi alloy system

Lam

Okamoto

Sabochick³

et al. 1993

Journal of Alloys and Compounds

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Section: Driving Force For Amorphizationsupporting

confidence: 80%

Radiation-induced crystalline-to-amorphous transition in intermetallic compounds of the CuTi alloy system

Lam

Okamoto

Sabochick³

et al. 1993

Journal of Alloys and Compounds

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“…In particular, the irradiation-induced crystallineto-amorphous (c-a) transition in alloys has been experimentally investigated for many years, one of the key questions being why some alloys but not others can be amorphized during irradiation. Mori et al 21 suggested that the accumulation of vacancies near dislocations induced the c-a transition; presumably, the interstitials are mobile and preferentially annihilate at the dislocations. 15 17 To determine the critical mechanism for amorphization, computer simulation studies have recently been carried out in the ordered compounds CuTi, CuTi 2 , and Cu 4 Ti 3 .…”

Section: Introductionmentioning

confidence: 99%

Point defect study of CuTi and CuTi₂

et al. 1991

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The energies and configurations of interstitials and vacancies in the ordered compounds CuTi and CuTi 2 were determined using atomistic simulation with realistic embedded-atom potentials. The formation energy of an antisite pair was found to be 0.385 and 0.460 eV in CuTi and CuTi 2 , respectively. In both compounds, the creation of a vacancy by the removal of either a Cu or Ti atom resulted in a vacant Cu site, with an adjacent antisite defect in the case of the Ti vacancy. The vacant Cu site in CuTi was found to be very mobile within two adjacent (001) Cu planes, with a migration energy of 0.19 eV, giving rise to two-dimensional migration. The vacancy migration energy across (001) Ti planes, however, was 1.32 eV, which could be lowered to 0.75 or 0.60 eV if one or two Cu antisite defects were initially present in these planes. In CuTi 2 , the vacancy migration energy of 0.92 eV along the (001) Cu plane was significantly higher than in CuTi. The effective vacancy formation energies were calculated to be 1.09 eV and 0.90 eV in CuTi and CuTi 2 , respectively. Interstitials created by inserting either a Cu or Ti atom had complicated configurations in which a Cu (111) split interstitial was surrounded by two or three Ti antisite defects. The interstitial formation energy was estimated to be 1.7 eV in CuTi and 1.9 eV in CuTi 2 .

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“…Radiation Effects Recent topics of this research field are amorphization Thomas et al, 1982;Mori et al, 1984;Luzzi et al, 1984;Fujita, 1986b) and recoil implantation of foreign atoms (Sumida and Fujita, 1983) induced by irradiation with high-energy electrons.…”

Section: Fig 11 Formation and Growth Processes Of Mechanical Twinsmentioning

confidence: 99%

The research center for ultra‐high voltage electron microscopy at Osaka University

Fujita

1989

J. Elec. Microsc. Tech.

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High-voltage electron microscopy has shown itself advantageous for the study of natural science, including biology, but especially for materials science. The most important advantage for materials science is for in situ experiments about the detailed processes of the phenomena that occur in bulk materials. The present paper is mainly concerned with several types of in situ experiments that have been carried out in the Research Center for Ultra-High Voltage Electron Microscopy, Osaka University. The following subjects have been studied: a) fundamental problems, such as the conditions necessary for in situ experiments, functional features of specimen treatment devices, and the effects of electron irradiation; b) the dislocation behavior of crystals under various conditions; c) high-temperature behavior of refractory materials, mainly ceramic composites; d) new applications of electron irradiation effects, such as amorphization of crystalline materials and electron-irradiation-induced foreign-atom implantation; e) environment-matter interaction, mainly chemical amorphization of alloys; and f) future trends of the in situ experiment, such as combinations with Auger valency electron spectroscopy and high-resolution electron microscopy.

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Amorphous transition in intermetallic compounds induced by electron irradiation

Cited by 112 publications

References 14 publications

Radiation-induced crystalline-to-amorphous transition in intermetallic compounds of the CuTi alloy system

Radiation-induced crystalline-to-amorphous transition in intermetallic compounds of the CuTi alloy system

Point defect study of CuTi and CuTi₂

The research center for ultra‐high voltage electron microscopy at Osaka University

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Amorphous transition in intermetallic compounds induced by electron irradiation

Cited by 112 publications

References 14 publications

Radiation-induced crystalline-to-amorphous transition in intermetallic compounds of the CuTi alloy system

Radiation-induced crystalline-to-amorphous transition in intermetallic compounds of the CuTi alloy system

Point defect study of CuTi and CuTi2

The research center for ultra‐high voltage electron microscopy at Osaka University

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Point defect study of CuTi and CuTi₂