An all-silicon Raman laser

Rong, Haisheng; Liu, Ansheng; Jones, Richard E.; Cohen, Oded; Hak, Dani; Nicolaescu, Remus; Fang, Alexander W.; Paniccia, Mario

doi:10.1038/nature03273

Cited by 797 publications

(430 citation statements)

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“…The push for dense integration of photonic elements into existing microelectronics circuits has revitalized the interest in semiconductor microphotonics [1][2][3][4]. Unfortunately, the benefits of tight optical confinement provided by high-index-contrast photonic elements have oftentimes been offset by increased optical losses due to high modal overlap with imperfect surfaces damaged by processing or imperfectly defined by lithography.…”

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confidence: 99%

Accurate measurement of scattering and absorption loss in microphotonic devices

2007

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We present a simple measurement and analysis technique to determine the fraction of optical loss due to both radiation (scattering) and linear absorption in microphotonic components. The method is generally applicable to optical materials in which both nonlinear and linear absorption are present and requires only limited knowledge of absolute optical power levels, material parameters, and the structure geometry. The technique is applied to high-quality-factor (Q =1ϫ 10 6 to Q =5ϫ 10 6 ) silicon-on-insulator (SOI) microdisk resonators. It is determined that linear absorption can account for more than half of the total optical loss in the high-Q regime of these devices.

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confidence: 99%

Accurate measurement of scattering and absorption loss in microphotonic devices

2007

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“…In order to overcome this drawback, several routes have been followed, such as the all-optical Si Raman laser 2 or the heterogeneous integration of direct bandgap III-V lasers on Si [3][4][5][6][7] . Here, we report on lasing in a direct bandgap group IV system created by alloying Ge with Sn 8 without mechanically introducing strain 9,10 .…”

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Lasing in direct-bandgap GeSn alloy grown on Si

et al. 2015

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Direct bandgap group IV materials may thus represent a pathway towards the monolithic integration of Si-photonic circuitry and CMOS technology.Although a group IV direct bandgap material has not been demonstrated yet, silicon photonics using CMOS-compatible processes has made great progress through the development of Si-based waveguides 12 , photodetectors 13 and modulators 14 . The thus emerging technology is rapidly expanding the landscape of photonics applications towards tele-and data communication as well as sensing from the infrared to the mid infrared wavelength range 15-17 . Today's light sources of such systems are lasers made from direct bandgap group III-V materials operated off-or on-chip which requires fibre coupling or heterogeneous integration, for example by wafer bonding 3 , contact printing 4,5 or direct growth 6,7 , respectively. Hence, a laser source made of a direct bandgap group IV material would further boost lab-on-a-chip and trace gas sensing 15 as well as optical interconnects 18 by enabling monolithic integration. In this context, Ge plays a prominent role since the conduction band minimum at the -point of the Brillouin-zone (referred to as -valley) is 3 located only approx. 140 meV above the fourfold degenerate indirect L-valley. To compensate for this energy difference and thus form a laser gain medium, heavy n-type doping of slightly tensile strained Ge has been proposed 19 . Later, laser action has been reported for optically 20 and electrically pumped Ge 21 doped to approx. 1 and 4×10 19 cm -3 , respectively. However, pump-probe measurements of similarly doped and strained material did not show evidence for net gain 22 , and in spite of numerous attempts, researchers failed to substantiate above results up to today. Other investigated concepts concern the engineering of the Ge band structure towards a direct bandgap semiconductor using micromechanicallystressed Ge nanomembranes 9 or silicon nitride (Si 3 N 4 ) stressor layers 23 . Very recently, Süess et al. 10 presented a stressor-free technique which enables the introduction of more than 5.7 % 24 uniaxial tensile strain in Ge µ-bridges via selective wet under-etching of a pre-stressedlayer. An alternative technique in order to achieve direct bandgap material is to incorporate Sn atoms into a Ge lattice, which primarily reduces the gap at the -point. At a sufficiently high fraction of Sn, the energy of the -valley decreases below that of the L-valley. This indirect-to-direct transition for relaxed GeSn binaries has been predicted to occur at about 20 % Sn by Jenkins et al. 25 , but more recent calculations indicate much lower required Sn concentrations in the range of 6.5-11.0 % 26,27 . A major challenge for the realization of such GeSn alloys is the low (< 1 %) equilibrium solubility of Sn in Ge 28 and the large lattice mismatch of about 15 % between Ge and -Sn. For GeSn grown on Ge substrates, this mismatch induces biaxial compressive strain causing a shift of the  and L-valley crossover towards higher Sn concentrations ...

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“…So far, some technologies are developed to reduce the carrier lifetime and all kinds of applications are achieved by using silicon WG, such as raman laser, raman amplification, alloptical switching, slow light, and wavelength conversion, etc. [3][4][5][6][7][8][9]. In this paper, for the first time we believe, in order to generate the high repetition rate pulse train, which is a critical technique in current and future optical networks, we have designed a theoretical model utilizing the ultra-small silicon WG structure.…”

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confidence: 99%

Generation of High Repetition Rate Picosecond Pulse Train Based on Ultra-Small Silicon Waveguide

Wu¹,

Luo²

2007

PIER

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Abstract-A designed model based on the ultra-small silicon waveguide(WG) is demonstrated to generate high repetition rate picosecond pulse train. Research result shows that 50 GHz repetition rate pulse can be obtained inside a 2-mm-long ultra-small silicon WG using signal wave at 1550 nm with a cw power of 0.2 mW and different delay modulation Gaussian pulses at 1670 nm with peak of 0.6 mW before the WG. the signal pulse train obtained has duration time as short as around 6 ps full width of half maximum(FWHM) and extinction ratio as large as up to 30 dB. Additionally, each pulse of signal pulse train obtained holds equal intensity and close Gaussian waveform.

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An all-silicon Raman laser

Cited by 797 publications

References 25 publications

Accurate measurement of scattering and absorption loss in microphotonic devices

Accurate measurement of scattering and absorption loss in microphotonic devices

Lasing in direct-bandgap GeSn alloy grown on Si

Generation of High Repetition Rate Picosecond Pulse Train Based on Ultra-Small Silicon Waveguide

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