An estimation of the backdoor coupling of UWB pulses on commercial wireless USB adapters

Klunder, Christian; Haseborg, J.L. ter

doi:10.1109/isemc.2008.4652101

Cited by 3 publications

(2 citation statements)

References 2 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…[11] Experimental measurements of susceptibility of electronics to HPM and UWB irradiation with repetition rate signals were presented in Ref. [12]. The injecting method was adopted to study the microwave vulnerability effect of integrated circuits (ICs) in Ref.…”

Section: Introductionmentioning

confidence: 99%

Damage effect and mechanism of the GaAs high electron mobility transistor induced by high power microwave

et al. 2016

View full text Add to dashboard Cite

In this paper, we present the damage effect and mechanism of high power microwave (HPM) on AlGaAs/GaAs pseudomorphic high-electron-mobility transistor (pHEMT) of low-noise amplifier (LNA). A detailed investigation is carried out by simulation and experiment study. A two-dimensional electro-thermal model of the typical GaAs pHEMT induced by HPM is established in this paper. The simulation result reveals that avalanche breakdown, intrinsic excitation, and thermal breakdown all contribute to damage process. Heat accumulation occurs during the positive half cycle and the cylinder under the gate near the source side is most susceptible to burn-out. Experiment is carried out by injecting high power microwave into GaAs pHEMT LNA samples. It is found that the damage to LNA is because of the burn-out at first stage pHEMT. The interiors of the damaged samples are observed by scanning electron microscopy (SEM) and energy dispersive spectrometer (EDS). Experimental results accord well with the simulation of our model.

show abstract

Section: Introductionmentioning

confidence: 99%

Damage effect and mechanism of the GaAs high electron mobility transistor induced by high power microwave

et al. 2016

View full text Add to dashboard Cite

show abstract

“…This feature makes UWB a promising radio technology for networks that deliver high data rates in short ranges [24]. A number of these applications, wherein UWB pulses for high data rates can be commercialized products, can be seen in UWB-USB adapters [25] and medical imaging [26] [27].…”

Section: Impulse-based Uwb High Data-rate Wpanmentioning

confidence: 99%

Review of the State of Art of Tunable Impulse Ultra-Wideband Technology as Integrator for Wireless Sensing and Identifications Short-Range Networks

Jawad¹,

Ismail²,

Hajjawi³

et al. 2014

WSN

View full text Add to dashboard Cite

show abstract

Impact of UWB pulses on basic pcb antennas for wireless communication systems using the 2.4 GHz ISM band

Klunder

Haseborg

2008

2008 International Symposium on Electromagnetic Compatibility - EMC Europe

View full text Add to dashboard Cite

An estimation of the backdoor coupling of UWB pulses on commercial wireless USB adapters

Cited by 3 publications

References 2 publications

Damage effect and mechanism of the GaAs high electron mobility transistor induced by high power microwave

Damage effect and mechanism of the GaAs high electron mobility transistor induced by high power microwave

Review of the State of Art of Tunable Impulse Ultra-Wideband Technology as Integrator for Wireless Sensing and Identifications Short-Range Networks

Impact of UWB pulses on basic pcb antennas for wireless communication systems using the 2.4 GHz ISM band

Contact Info

Product

Resources

About