An evaluation of dielectric qualities by using frequency dependence in superbenzene-ring based organic polymer-semiconductors

Akay, Defne; Gökmen, Uğur; Ocak, Sema Bi̇lge

doi:10.1016/j.matchemphys.2020.122708

Cited by 19 publications

(7 citation statements)

References 25 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The radiation effects on the Al/Gr/Al 2 O 3 /p-Si structure can easily be seen from the current study. Moreover, compared to other previous work on Schottky structures [53][54][55][56][57][58], gamma-ray irradiation plays an important role in modifying it for the desired result. Although the barrier height, series resistance, and behavior of the ideality factor depend strongly on the method evaluated, it is seen that the structure is affected by radiation and the amount of radiation.…”

Section: Discussionmentioning

confidence: 99%

The impact of gamma-ray irradiation on temperature-sensitive electrical characteristics of Graphene/Al₂O₃/p-type Si structure

2021

View full text Add to dashboard Cite

In this work, the impact of gamma-ray irradiation (γ) on graphene/Al 2 O 3 /p-type Si structure has been investigated. For this, temperature-sensitive current-voltage (I-V ) analyses of the structure exposed to gamma radiation have been carried out. I-V measurements have been made between −3 V and 3 V to analyze electrical properties of the graphene/Al 2 O 3 /p-type Si before and after 60 Co γirradiation. I-V measurements of the structure have been made at the range of 300 K-405 K. Thermionic emission (TE) theory and Cheung's methods have been used to examine the electrical features of the structure. The discrimination of all experimental results has been done by using Principal Component Analysis (PCA). In PCA analysis, the first two principal components (PC1=75.6% and PC2=20.9%) accounted for 96.5% of the variance, which is a very good result.

show abstract

Section: Discussionmentioning

confidence: 99%

The impact of gamma-ray irradiation on temperature-sensitive electrical characteristics of Graphene/Al₂O₃/p-type Si structure

2021

View full text Add to dashboard Cite

show abstract

“…In our previous studies [9,10,22], G-V and C-V results of the 60 Co gamma-ray radiation effect of MPS structures and the effect of electrical characteristics on 60 Co gamma-ray irradiation effect of Al/C 42 H 28 /P-Si structures have been examined [12]. The present study aims to obtain high-performance MPS structures before and after gamma-radiation by using C 42 H 28 as a thin interfacial polymer layer on the P-Si structure.…”

Section: Introductionmentioning

confidence: 88%

“…Besides all these advantages, semiconductors have also several disadvantages. The semiconductors' electrical conductivity value ranges between that of inorganic semi-conductors and that of insulators [5][6][7][8][9][10][11][12][13][14][15][16][17]. The reason for this drawback can be due to the relatively inefficient hopping process which is primarily bound by van der Waals interaction.…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Investigation of radiation-associated deformation in the electrical properties of metal-polymer semiconductor

Gökmen

2021

Phys. Scr.

View full text Add to dashboard Cite

In the present study, rubrene-based Schottky barrier structures have been formed by using the evaporation technique to investigate the conductance–voltage (G–V) and capacitance-voltage (C–V) values of the effect of the 60Co gamma-ray irradiation. The conductance and capacitance values were measured before and after 60Co gamma-ray radiation at 100 kHz, 500 kHz and 1 MHz. The frequency-dependent effects of interface state density and series resistance with and without irradiation in dark were analyzed at room temperature. The analysis results imply that values of forward and reverse C characteristics decrease the rate depending on gamma-ray irradiation and the increment of voltage due to the exchange of majority carriers between the majority carrier band of semiconductor and interface states. The irradiation dose and frequency increase show irradiation dispersion at the accumulation region when an A.C. signal is applied to the semiconductor structures. The G–V characteristics of rubrene-based Schottky barrier structures change with gamma radiation dose at different frequencies. Also, these characteristics relate to the density of the interface states. The analyses reveal that D it values decrease with the increase in frequency before 60Co gamma-ray irradiation. These values also decrease with the increase in frequency at the same radiation doses after 60Co gamma-ray irradiation. They decrease with the increase in irradiation doses at the same frequency, except for 100 kHz. Experimental results indicate that rubrene-based Schottky barrier structures can be altered using 60Co gamma-ray irradiation. The experimental contributions indicate a substantial step forward in the structure-function relationship in the benchmark organic semiconductors.

show abstract

“…Many fixed hole traps are also available. It was seen that there were considerable changes in the electrical properties of Schottky-based structure for radiation doses higher than one kGy [40][41][42][43][44][45][46][47]. Owing to the impact of radiation at the insulator layer/semiconductor interface, a large quantity of e-h pairs were produced.…”

Section: Introductionmentioning

confidence: 99%

Changes in frequency-dependent dielectric features of monolayer graphene/silicon structure due to gamma irradiation

Seven¹,

Orhan²,

Ocak³

2021

Phys. Scr.

View full text Add to dashboard Cite

The present work intends to discover the influences of 60Co gamma (γ) ray-irradiation on frequency-dependent dielectric features of Graphene/Silicon Schottky diode with an insulator layer. Graphene (Gr) nanosheets have been synthesized by chemical vapor deposition (CVD) to build a Gr-based p-type Si Schottky diode. The diode was irradiated at 30 kGy and 60 kGy doses. The study has been performed at 300 K in the voltage range −6 V to +6 V at dark conditions both at 400 kHz low-frequency and 900 kHz high-frequency. The experimental results showed that dielectric features of the structure are dependent on the radiation dose and applied voltage and to be a strong function of frequency.

show abstract

An evaluation of dielectric qualities by using frequency dependence in superbenzene-ring based organic polymer-semiconductors

Cited by 19 publications

References 25 publications

The impact of gamma-ray irradiation on temperature-sensitive electrical characteristics of Graphene/Al₂O₃/p-type Si structure

The impact of gamma-ray irradiation on temperature-sensitive electrical characteristics of Graphene/Al₂O₃/p-type Si structure

Investigation of radiation-associated deformation in the electrical properties of metal-polymer semiconductor

Changes in frequency-dependent dielectric features of monolayer graphene/silicon structure due to gamma irradiation

Contact Info

Product

Resources

About

An evaluation of dielectric qualities by using frequency dependence in superbenzene-ring based organic polymer-semiconductors

Cited by 19 publications

References 25 publications

The impact of gamma-ray irradiation on temperature-sensitive electrical characteristics of Graphene/Al2O3/p-type Si structure

The impact of gamma-ray irradiation on temperature-sensitive electrical characteristics of Graphene/Al2O3/p-type Si structure

Investigation of radiation-associated deformation in the electrical properties of metal-polymer semiconductor

Changes in frequency-dependent dielectric features of monolayer graphene/silicon structure due to gamma irradiation

Contact Info

Product

Resources

About

The impact of gamma-ray irradiation on temperature-sensitive electrical characteristics of Graphene/Al₂O₃/p-type Si structure

The impact of gamma-ray irradiation on temperature-sensitive electrical characteristics of Graphene/Al₂O₃/p-type Si structure