An experimental low temperature DRAM

等)、非超导存储器 (包括易失的静态随机存储器 (static random access memory, SRAM) [7] 、动态随机存储器 (dynamic random access memory, DRAM) [8] 、非易失的阻变存储器 (resistive random access memory, RRAM) [9] 、铁电存储器 (ferroelectric random access memory, FeRAM)、磁存储器 (magnetic random access memory, MRAM)、相变存储器 (phase-change random access memory, PCRAM) 等) 以

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An experimental low temperature DRAM

Cited by 2 publications

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Trends in megabit DRAM circuit design

Trends in megabit DRAM circuit design

Low-temperature CMOS technology for high-performance computing: development and challenges

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