An extrinsic component parameter extraction method for high power RF LDMOS transistors

Wood, John; Lamey, D.; Guyonnet, M.; Chan, D.; Bridges, D.; Monsauret, N.; Aaen, Peter H.

doi:10.1109/mwsym.2008.4633239

Cited by 14 publications

(12 citation statements)

References 5 publications

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“…These extrinsic resistance values were obtained from broadband S-parameter measurements of the transistor biased in "Cold FET" conditions, as outlined in [36]. The measured and simulated data are then scaled to the periphery.…”

Section: Device Characteristicsmentioning

confidence: 99%

A Quasi-Two-Dimensional Model for High-Power RF LDMOS Transistors

Everett

Kearney

Rueda³

et al. 2011

IEEE Trans. Electron Devices

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Abstract-A new quasi-two-dimensional (Q2D) model for laterally diffused MOS (LDMOS) RF power transistors is described in this paper. We model the intrinsic transistor as a series PHV-NHV network, where the regional boundary is treated as a revere biased p+/n diode. A single set of one-dimensional energy transport equations are solved across a two-dimensional cross-section in a "current-driven" form and specific device features are modeled without having to solve regional boundary node potentials using numerical iteration procedures within the model itself. This fast, process-oriented, nonlinear physical model is scalable over a wide range of device widths and accurately models DC and microwave characteristics. Index Terms-Field Effect transistor (FET), laterally diffused MOS (LDMOS), quasi-two-dimensional (Q2D), transistor model.

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Section: Device Characteristicsmentioning

confidence: 99%

A Quasi-Two-Dimensional Model for High-Power RF LDMOS Transistors

Everett

Kearney

Rueda³

et al. 2011

IEEE Trans. Electron Devices

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“…Our methodology is outlined below, and described in detail in [9]. Broadband S-parameters were measured under bias conditions of zero volts on gate and drain terminals of the transistor: this ensures the LDMOS transistor is biased below threshold, and is in the passive or 'Cold' condition.…”

Section: Extrinsic Network Parameter Extractionmentioning

confidence: 99%

“…The manifold structure and the extrinsic network are deembedded to obtain S-parameter data at the intrinsic model reference planes [9]. After converting to Y-parameters, the LDMOS transistor model current and charge state functions can then be obtained by integration of the small-signal voltagedependent parameters, using the following equations [3].…”

Section: Nonlinear Intrinsic Modelmentioning

confidence: 99%

A Nonlinear Electro-Thermal Scalable Model for High-Power RF LDMOS Transistors

Wood¹,

Aaen²,

Bridges³

et al. 2009

IEEE Trans. Microwave Theory Techn.

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Abstract-A new nonlinear, charge-conservative, scalable, dynamic electro-thermal compact model for LDMOS RF power transistors is described in this paper. The transistor is characterized using pulsed I-V and S-parameter measurements, to ensure isothermal conditions. A new extrinsic network and extrinsic parameter extraction methodology is developed for high power RF LDMOS transistor modeling, using manifold de-embedding by electromagnetic simulation, and optimization of the extrinsic network parameter values over a broad frequency range. The intrinsic model comprises controlled charge and current sources that have been implemented using artificial neural networks (ANNs), designed to permit accurate extrapolation of the transistor's performance outside of the measured data domain. A thermal sub-circuit is coupled to the nonlinear model. Largesignal validation of this new model shows a very good agreement with measurements at 2.14 GHz.

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“…The manifold structure and the extrinsic network are de-embedded to obtain S-parameter data at the intrinsic model reference planes [5]. After converting to Y-parameters, the LDMOS transistor model current and charge state functions can then be obtained by integration of the small-signal voltage-dependent parameters, using the following equations found in [3].…”

Section: Transistor Characterization and Extractionmentioning

confidence: 99%

“…Included in this model are accurate, continuously-differentiable functions for the model currents and charges, and a self-consistent electro-thermal model coupled to these sources. An accurate, broadband extrinsic network model and extraction procedure are described in detail elsewhere [5].…”

Section: Introductionmentioning

confidence: 99%

A nonlinear electro-thermal model for high power RF LDMOS transistors

Bridges¹,

Wood²,

Guyonnet³

et al. 2008

2008 IEEE MTT-S International Microwave Symposium Digest

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Abstract-A new nonlinear, charge-conservative, dynamic electro-thermal compact model for LDMOS RF power transistors is described in this paper. The transistor is characterized using pulsed I-V and S-parameter measurements, to ensure isothermal conditions. The intrinsic model current and charge sources are obtained by integration of the real and imaginary components, respectively, of the small-signal Y-parameters: this yields a charge-conservative model by design. A thermal sub-circuit is used to introduce dynamic thermal dependence, and thermal threshold voltage shift is built in. DC and large-signal validation of the model is presented. I. INTRODUCTIONPower amplifiers for wireless communications systems are tightly specified in terms of their linearity performance, bandwidth, etc., while at the same time customers are requiring higher powers, greater efficiencies, as well as easilylinearizable performance. These system specifications and performance compromises, and the increasing adoption of complex signal modulations make it very difficult to design an optimized power amplifier in a timely manner without the use of CAD techniques. This places a premium on the availability of accurate nonlinear transistor models.The combination of high powers and high frequencies in RF and microwave power amplifiers brings together a unique set of challenges for the device modeling engineer. The power transistors themselves are physically large, and may occupy a significant fraction of a wavelength, even at microwave frequencies. The electrical behavior in this distributed environment must be captured in the model. The device will generate a lot of heat, and the thermal effects on the transistor's electrical behavior will also need to be characterized and modeled accurately.Laterally-diffused MOS (LDMOS) FETs are used almost exclusively for high power transistors for wireless infrastructure or base-station applications. They provide an unmatchable combination of performance and cost, and are capable of delivering hundreds of watts of RF power.In this paper we shall outline a new nonlinear intrinsic model for the LDMOS transistor, and its extraction and implementation. The model architecture, shown in Fig. 1, is, by design, technology-independent. The technology-specific components will be defined in the manifolds and extrinsic parts of the model, which capture the electrical behavior of the layout and physical structure of the transistor. The intrinsic part of the model, shown in the center of Fig. 1, describes the nonlinear behavior of the transistor, using voltage-controlled current and charge sources: the model state functions. This

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An extrinsic component parameter extraction method for high power RF LDMOS transistors

Cited by 14 publications

References 5 publications

A Quasi-Two-Dimensional Model for High-Power RF LDMOS Transistors

A Quasi-Two-Dimensional Model for High-Power RF LDMOS Transistors

A Nonlinear Electro-Thermal Scalable Model for High-Power RF LDMOS Transistors

A nonlinear electro-thermal model for high power RF LDMOS transistors

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