2015
DOI: 10.1109/tdmr.2015.2397447
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An Improved Four-Port Equivalent Circuit Model of RF MOSFETs for Breakdown Operation

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Cited by 5 publications
(9 citation statements)
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“…This result confirmed in the study of Raman, Cortes and Hao [15][16][17][18][19][20]. Since these parameters are shifted after ageing, as thereby given also in literatures [4][5][6][7][8][9][10][11][12][13][14][15][16][17][18][19][20][21][22][23].…”
Section: Resultssupporting
confidence: 84%
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“…This result confirmed in the study of Raman, Cortes and Hao [15][16][17][18][19][20]. Since these parameters are shifted after ageing, as thereby given also in literatures [4][5][6][7][8][9][10][11][12][13][14][15][16][17][18][19][20][21][22][23].…”
Section: Resultssupporting
confidence: 84%
“…6a. The shifts of S 12 and S 21 can be explained by the shift of G m curve and C gd variations and C rss [4][5][6][7][8][9][10][11][12][13][14][15][16][17][18][19], whereas the shifts of these parameters are due to the generation of interface states induced by hot carriers after ageing. This result confirmed in the study of Raman, Cortes and Hao [15][16][17][18][19][20].…”
Section: Resultsmentioning
confidence: 99%
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