An Inductor-less Sub-mW Low Noise Amplifier for Wireless Sensor Network Applications

Karimlou, Atiyeh; Jafarnejad, Roya; Sobhi, Jafar

doi:10.1016/j.vlsi.2015.07.009

Cited by 17 publications

(3 citation statements)

References 20 publications

(24 reference statements)

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“…The mixing operation can also be performed by using the body terminal of a MOS transistor [10]. This type of mixer is called Body Injection Mixer.…”

Section: Review Of Techniquesmentioning

confidence: 99%

Comparative Study and Design of High Performance Mixer

Vyas

2024

IJSREM

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In recent time the use of RF mixer has been increased greatly. Gilbert cell is widely used as core of the mixer because it provides high conversion gain, good port-to-port isolation and low even-order distortion. It is found that the linearity of mixer is very good for Multi-Tanh technique by incorporating multiple differential trans-conductance stage but it reaches to very low conversion gain whereas, use of current bleeding technique increase linearity and conversion gain of the mixer by adding current source to increase the bias current at the expense of power consumption. Since, CMOS technology has become dominant because of its several advantages such as low cost, low static power dissipation and low area, the design of low noise amplifier using CMOS technology was top choice for design of Low Noise Amplifier. The single ended and differential LNA was designed to operate in a WCDMA reception range using a BSIM3V2 model (Level 49) CMOS UMC 0.18μm technology in Xcircuit Open source EDA tool. The key issues in the design, gain, noise and linearity were considered. The LNA’s was designed to provide high gain, matching to 50Ω RF system, good linearity.

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“…The mixing operation can also be performed by using the body terminal of a MOS transistor [10]. This type of mixer is called Body Injection Mixer.…”

Section: Review Of Techniquesmentioning

confidence: 99%

Comparative Study and Design of High Performance Mixer

Vyas

2024

IJSREM

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“…However, with the utilization of the LNA design in RF, high gain and wide bandwidth can be achieved related to small variations. Atiyeh Karimlou et al [18] have designed inductor less Sub-mW differential Common-Gate Low Noise Amplifier (CGLNA) for ZigBeestandard.The design circuit have the advantages of dual capacitive cross coupling (DCCC) and shunt feedback for reducing power consumption in addition the bandwidth extension capacitors to assits 2.4 GHz ISM band. Different inductor less amplifiers can be designed that provide input impedance matching and voltage gain without any inductors such as common gate amplifier (RCS), shunt feedback amplifier (SFB) and resistor terminated common source (R-CS) amplifier.…”

Section: Design Of Lna Amplifier For MM Wavementioning

confidence: 99%

An Extensive Review On: Low Noise Amplifier for Millimeter and Radio Frequency Waves

2021

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In today’s world, radio receiver system is a prevailing wireless technology in that the major part is Low Noise Amplifier (LNA) which widely used to improve weak signals in many applications with millimeter and radio frequency waves such as optical communication, multimode transceivers and measurement instrumentations. The real drawbacks of LNA is that it fails to maintain specific properties in critical conditions like as minimum power consumption, provide low noise figure, input matching and linearity. Additionally, promoted by various application demands, design methods and control methods must require to improve performance of LNA. The performance of LNA can be improved by adding extra components in basic circuit by proper arrangement for millimeter and radio frequency waves. The review paper provides information about design methodology, optimization techniques and control techniques. The different design of LNA is reviewed and analyzed such as 3-stage near-mm Wave LNA, 5-stage near-mm Wave LNA, common-gate amplifier, shunt-feedback amplifier, Resistor-terminated common-source amplifier, Traditional inductor-less amplifiers, cascode connection and double common source. This review paper also provides the information about design circuit diagram. The performance improvement of LNA can be achieved with the help of different techniques and our review based on optimization and control techniques with parameter tuning. Finally, the direction for the future study is presented based on review analysis of LNA.

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“…In differential LNA, g m and NF are optimized by cross‐coupled CG configuration, which has reduced the effect of thermal noise by 50% . Unfortunately, g m boosting is inadequate in some configurations as reported by Atiyeh et al…”

Section: Noise Reduction Techniquesmentioning

confidence: 99%

Survey on parameter optimization of mobile communication band low noise amplifier design

Roobert¹,

Rani²

2019

Int J RF Microw Comput Aided Eng

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A comparative study on recent works on low noise amplifiers (LNAs) designed to be operated at mobile communication band is performed in this article. Here, specifications of different generations of mobile communication are listed, which are considered to classify recent works on LNAs. Even though gain and noise figure (NF) are the primary parameters of LNA; other parameters like power, linearity, bandwidth, and area also get importance. Due to this, optimization techniques handpicked for all those parameters are discussed. The inverse relation between gain and NF is exploited to achieve low noise and high gain together. While increasing the gain, power consumption is increased by drain current. Each LNA is found as good in terms of gain and other parameters to satisfy the requirements. The figure of merit is opted to find the performance of each LNA, and the comparison is performed. The best parameters reported in the comparison are 31.53 dB of gain, 0.7 dB of NF, 0.03 mw of power consumption, 18.14 dBm of third-order input intercept point (IIP3), 24 GHz bandwidth and 0.0052 mm 2 of area at different frequencies and technology nodes. In this survey, as per the optimized FoM for mobile communication, crosscoupled common gate differential LNA, which was designed to be operated at 0.3 to 2.96 GHz gives better results among CMOS LNAs.

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An Inductor-less Sub-mW Low Noise Amplifier for Wireless Sensor Network Applications

Cited by 17 publications

References 20 publications

Comparative Study and Design of High Performance Mixer

Comparative Study and Design of High Performance Mixer

An Extensive Review On: Low Noise Amplifier for Millimeter and Radio Frequency Waves

Survey on parameter optimization of mobile communication band low noise amplifier design

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