2009 IEEE International Conference on Indium Phosphide &Amp; Related Materials 2009
DOI: 10.1109/iciprm.2009.5012480
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An InGaAs PIN-diode based broadband traveling-wave switch with high-isolation characteristics

Abstract: A high-isolation broadband travelingwave switch using InGaAs PIN diodes is proposed. The circuit design and the analysis of the traveling-wave switch based on an artificial transmission line design are described. The newly proposed MMIC switch provides low insertion loss of less than 3.5 dB and high isolation of better than 39 dB from 15 GHz to 70 GHz. The significantly reduced chip size of 1.0 × 0.8 mm 2 including pads has been achieved by using the meandered microstrip lines.

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Cited by 4 publications
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