An innovative green process for separating and enriching tellurium from lead anode slime via vacuum gasification

Yi, Jiafei; Cheng, Keke; Zha, Guozheng; Fan, Kai; Li, Shaoxiong; Kong, Xiangfeng; Yang, Bin; Liu, Dachun; Xu, Baoqiang

doi:10.1016/j.jmrt.2021.12.060

Cited by 14 publications

(2 citation statements)

References 18 publications

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“…After the oxidation of the Se 0.5 Te 0.5 film, an amorphous TeO 2 layer, undetected in XRD and Raman spectra, appears to persist on the surface as a capping layer. However, Se or SeO 2 seems to evaporate due to their high vapor pressures of 7.3 × 10 −238 and 3.8 × 10 2 Torr, 39 respectively, which is 10 2 times greater than of Te (1.6 × 10 −4 Torr) 40 and TeO 2 (<7.5 × 10 −7 Torr) 41 at 250 °C. However, at 300 °C, the majority of the neutral Te and Se states almost completely disappeared even inside the film.…”

Section: ■ Results and Discussionmentioning

confidence: 94%

Promotion of Processability in a p-Type Thin-Film Transistor Using a Se–Te Alloying Channel Layer

Choi,

Nam,

Kim

et al. 2024

ACS Appl. Mater. Interfaces

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p-type thin-film transistors (pTFTs) have proven to be a significant impediment to advancing electronics beyond traditional Si-based technology. A recent study suggests that a thin and highly crystalline Te layer shows promise as a channel for high-performance pTFTs. However, achieving this still requires specific conditions, such as a cryogenic growth temperature and an extremely thin channel thickness on the order of a few nanometers. These conditions critically limit the practical feasibility of the fabrication process. Here, we report a high-performance pTFT incorporating a 60-nm-thick highly crystalline Se−Te alloyed channel layer, produced using pulsed laser ablation at room temperature. The Se 0.5 Te 0.5 alloy system enhances crystalline temperature and widens the band gap compared to a pure Te channel. Consequently, this approach results in a field-effect mobility of 3 cm 2 /V•s, with an on/off current ratio of 3 × 10 5 , a subthreshold slope of 2.1 V/decade, and a turn-on voltage of 6.5 V, achieved through conventional annealing at 250 °C. To demonstrate its applicability in complementary circuit applications, we integrate a complementary-type inverter using a p-type Se 0.5 Te 0.5 TFT and an n-type Al-doped InZnSnO, demonstrating a high voltage gain of 12 and a low static power consumption of 17 nW. This suggests that the Se−Te alloyed channel approach paves the way to a more straightforward and cost-effective process for Te-based pTFT devices and their applications.

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Section: ■ Results and Discussionmentioning

confidence: 94%

Promotion of Processability in a p-Type Thin-Film Transistor Using a Se–Te Alloying Channel Layer

Choi,

Nam,

Kim

et al. 2024

ACS Appl. Mater. Interfaces

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show abstract

“…The maximum volatilization rate (ωmax), a critical parameter, refers to the speed at which material molecules transition from Fm to Fc without interference from gas molecule collisions. A higher ωmax facilitates more straightforward material volatilization, subsequently reducing volatilization time and enhancing efficiency (Yi et al 2022;Wang et al 2023). The volatilization rate equation (2) for a substance can be extrapolated from the Langmuir equation (Dai and Yang 2009).…”

Section: Maximum Volatilization Rate Of Oxidesmentioning

confidence: 99%

Resourceful cleaner preparation of Sb2O3 with vacuum vaporization- condensation from hazardous arsenic antimony dust

Li,

Kong,

Fan

et al. 2024

Preprint

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Hazardous arsenic antimony dust (HAAD), a perilous by-product with significant antimony and arsenic concentrations generated in smelters, poses a substantial environmental threat. The imperative of resource recycling and the innocuous processing of HAAD stand as prevalent challenges and pressing priorities. This study introduces an innovative vacuum vaporization-condensation technique, capitalizing on the intrinsic merits of vacuum metallurgy, to synthesize Sb2O3. ICP analysis evidenced an enhancement in the purity of the Sb2O3 product from an initial 73.96–91.35%, with a concomitant reduction in As impurities from 18.10–6.20%, and residual contaminants approximating 0.17% following a dual-phase vacuum vaporization-condensation process at divergent temperatures. XRD assessments affirmed the feasibility of direct Sb2O3 synthesis via vapor-phase migration and condensate amalgamation, achieving substantial As2O3 impurity diminution. SEM and EPMA observations underscored a homogenous particulate morphology in the refined Sb2O3. Incomplete As extraction from the refined Sb2O3 product was attributed to the persistence of (As, Sb2)O4.5, accompanied by partial Sb attrition throughout the fabrication sequence. The suboptimal partitioning efficacy of (As, Sb2)O4.5 warrants further investigation. This methodology underscores its environmental compatibility, characterized by zero gaseous effluent, absence of wastewater expulsion, and elimination of reagent usage, thereby mitigating environmental detriments and paving the way for the sustainable exploitation of HAAD.

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Resourceful preparation of Sb2O3 in hazardous As-Sb dust from typical lead smelter

Li,

Kong,

Gao

et al. 2024

J. Cent. South Univ.

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An innovative green process for separating and enriching tellurium from lead anode slime via vacuum gasification

Cited by 14 publications

References 18 publications

Promotion of Processability in a p-Type Thin-Film Transistor Using a Se–Te Alloying Channel Layer

Promotion of Processability in a p-Type Thin-Film Transistor Using a Se–Te Alloying Channel Layer

Resourceful cleaner preparation of Sb2O3 with vacuum vaporization- condensation from hazardous arsenic antimony dust

Resourceful preparation of Sb2O3 in hazardous As-Sb dust from typical lead smelter

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