An Optically Readable InGaN/GaN RRAM

Abstract

The unidirectional bipolar resistance switching in GaN/InGaN-based light-emitting diode (LED) was discovered to explore optically readable resistive random access memory (RRAM) device. The device displays stable resistance window in both endurance and retention tests, showing good nonvolatility for memory application. The light-emitting state of this device can also be tuned by the resistance switching. Such phenomenon is illustrated as the switching between conventional lightemitting rectifying behavior and nonlight-emitting metal-like ohmic behavior. Large amount of structural and point defects in the epitaxial wafer were considered as the main contributor to the resistance switching in LED device. IndexTerms-Defect, filament, GaN, light-emitting diode (LED), resistive random access memory (RRAM).

Performance Enhancement and In Situ Observation of Resistive Switching and Magnetic Modulation by a Tunable Two‐Level System of Mn Dopants in a‐Gallium Oxide‐based Memristor

“…[3][4][5][6] DOI: 10.1002/adfm. 202304749 Various oxides, [7][8][9] nitrides, [10,11] and sulfides [12,13] have been investigated as the switching layers in RRAM. Among them, gallium oxide is one of the ideal candidates for its robust bipolar resistive switching (RS) characteristics and good chemical stability.…”

“…[ 1,2 ] Recently, resistive random‐access memory (RRAM), one of the most important potential memristor applications, has attracted extensive interest for its excellent functionality, simplicity of fabrication, low consumption of power, and system‐wide electrical feature. [ 3–6 ] Various oxides, [ 7–9 ] nitrides, [ 10,11 ] and sulfides [ 12,13 ] have been investigated as the switching layers in RRAM. Among them, gallium oxide is one of the ideal candidates for its robust bipolar resistive switching (RS) characteristics and good chemical stability.…”