An ultra-high efficiency high power Schottky varactor frequency doubler to 180–200 GHz

Waliwander, Tomasz; Fehilly, Martin; O’Brien, E

doi:10.1109/gsmm.2016.7500327

Cited by 20 publications

(5 citation statements)

References 3 publications

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“…In addition to the power handling capability, another important specication of frequency multipliers is their conversion ef ciency, which is determined by many parameters, including the input power, frequency, bias, and temperature. The maximum efciency is often achieved when the multipliers are in varactor mode (under a reverse bias) [135]. Moreover, the matching circuits must be properly designed to maximize the power transfer at the desired frequencies and suppress unwanted harmonics.…”

Section: Local Oscillatorsmentioning

confidence: 99%

“…Usually, higher ef ciencies can be obtained at the cost of a reduction in the bandwidth. A conversion ef ciency up to 42.5% (at 190 GHz) has been reached [135]. To date, solid-state sources based on Schottky diode multiplier chains can deliver a milliwatt-level output power of ∼900 GHz and a microwatt power up to 2.7 THz [136][137][138][139][140].…”

Section: Local Oscillatorsmentioning

confidence: 99%

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Heterodyne terahertz detection through electronic and optoelectronic mixers

Lin

Jarrahi

2020

Rep. Prog. Phys.

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The high sensitivity detection of terahertz radiation is crucial for many chemical sensing, biomedical imaging, security screening, nondestructive quality control, high-data-rate communication, atmospheric, and astrophysics sensing applications. Among various terahertz detection techniques, heterodyne detection is of great interest for applications that require high spectral resolution. Heterodyne detection involves mixing the received terahertz radiation with a reference terahertz signal provided by a local oscillator and then down-converting it to an intermediate frequency for detection. The frequency of the intermediate frequency signal is usually chosen to be in the radio frequency regime, so that it can be accurately analyzed by well-developed radio frequency electronics, including ampli ers, lters, and spectrometers, for further processing. Heterodyne terahertz detection offers two major advantages over direct terahertz detection. First, the detected terahertz radiation is effectively enhanced by the reference local oscillator signal through the mixing process, thereby enabling the detection of very weak terahertz signals. Second, the detected noise power is effectively reduced by limiting the detected spectral bandwidth to the bandwidth of the intermediate frequency electronics. In this article, we present a broad overview of various types of heterodyne terahertz receivers, which utilize different electronic and optoelectronic techniques to down-convert the received terahertz signal to a radio frequency signal. We describe how the inherent nonlinearity of a Schottky diode, superconductor-insulator-superconductor junction, hot electron bolometer, and eld-effect transistor can be utilized to mix the received terahertz radiation with a reference local oscillator signal from a gas laser, quantum cascade laser, photomixer, Gunn diode, IMPATT diode, and frequency multiplier and then down-convert it to a radio frequency signal. The down-converted radio frequency signal can be subsequently detected and analyzed by various backend spectrometers, including lter bank, acousto-optical, autocorrelator, fast Fourier transform, and chirp transform spectrometers. We also discuss how a photomixer pumped by a heterodyning optical beam can be used to down-convert the received terahertz radiation to a radio frequency signal with far fewer bandwidth constraints than conventional techniques. The advantages and disadvantages of different heterodyne receivers in terms of their noise performance, operation frequency, operation bandwidth, and operation temperature are discussed in detail.

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Section: Local Oscillatorsmentioning

confidence: 99%

Section: Local Oscillatorsmentioning

confidence: 99%

Heterodyne terahertz detection through electronic and optoelectronic mixers

Lin

Jarrahi

2020

Rep. Prog. Phys.

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“…These frequency multipliers can be divided into two categories to achieve the target of high power performance, as: (a) using the single-chip circuit or discrete Schottky diodes and (b) introducing the power-combining topology (the shaded area in the table). In (a) multipliers, 5,8,[19][20][21][22] the high power has been reached mainly with sacrificing partial efficiency or bandwidth. It can be seen from (b) multipliers that the power-combining way is still the preferred solution for the improvement in power-handling capability.…”

Section: Performance Comparisonmentioning

confidence: 99%

A 300 GHz power‐combined frequency doubler based on E‐plane 90°‐hybrid and Y‐junction

Ding

Maestrini

Gatilova

et al. 2019

Micro & Optical Tech Letters

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In this article, a 300 GHz power‐combined frequency doubler using two chips in a single waveguide block is developed to acheive high power handling capability. Each doubler chip integrated with six diodes on a 5‐μm‐thick GaAs membrane is manufactured by the LERMA‐C2N Schottky process. In the power combining architecture, the input wave is split into two paths with a 90° relative phase shift by using a 90° hybrid coupler, and the in‐phase E‐field power combining between the output ports is provided by an E‐plane Y‐junction. This doubler can enjoy comparable performance of bandwidth and efficiency as the single‐chip version except with the twice input power handling. Partial results including ~8 mW output power and ~15% efficiency have been delivered in the band of 260‐310 GHz when pumping with 20‐60 mW input power, which indicates that this dual‐chip doubler can work availably. Such E‐plane power‐combined doubler can be further served to drive high‐power terahertz multiplier chains, and also pump multipixel heterodyne detectors.

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“…been developed as the core of solid-state high-power THz sources, due to the advantages of lower phase noise, stability and wide-band millimeter wave signals [5][6][7], which has been confirmed and validated in GaAs systems [8]. On the other hand, by fully taking advantage the characteristics of material properties, different kinds of THz sources are given birth on the basis of various novel semiconductor systems for highpower sources, e.g.…”

Section: Introductionmentioning

confidence: 99%

Monolithic integrated GaN-based 120 GHz frequency doubler on sapphire

Liang

Liu

Jin

et al. 2023

J. Phys. D: Appl. Phys.

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A novel monolithic integrated frequency doubler in D-band was designed and fabricated on sapphire substrate in this work. A 120 GHz solid-state source GaN planar Schottky barrier diode chain integrating with the microstrip circuitry was achieved and analyzed. The continuous mode output power of the prototype device reaches 35.6 mW at 120 GHz with an efficiency of 8.9 %. And the characteristics of GaN SBDs and monolithic integrated heat dissipation were discussed and analyzed. The results announce the success of exploring a novel avenue towards frequency multipliers in GaN materials solid-state source, which greatly simplifies the assembly, improves assembly accuracy and scale integration possible for THz applications.

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An ultra-high efficiency high power Schottky varactor frequency doubler to 180–200 GHz

Cited by 20 publications

References 3 publications

Heterodyne terahertz detection through electronic and optoelectronic mixers

Heterodyne terahertz detection through electronic and optoelectronic mixers

A 300 GHz power‐combined frequency doubler based on E‐plane 90°‐hybrid and Y‐junction

Monolithic integrated GaN-based 120 GHz frequency doubler on sapphire

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