An X-Band Switchless Bidirectional GaN MMIC Amplifier for Phased Array Systems

Kim, Dongmin; Lee, Dong‐Ho; Sim, Sanghoon; Jeon, Laurence; Hong, Songcheol

doi:10.1109/lmwc.2014.2359366

Cited by 23 publications

(9 citation statements)

References 7 publications

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“…It also indicates the possibility of implementing several diodes [140, 149, 333] or onchip transformer [98, 166, 171, 189, 210, 223, 230, 238, 243, 256, 273, 284, 305, 308, 309, 315, 317, 319, 321, 325, 330, 332, 358] in RFICs. Moreover, the validity and reliability of ADS simulations in the RF region were confirmed by the previous works [50, 52, 54, 56, 57, 59, 61, 71, 102, 114, 164, 165, 169, 183, 188, 203, 207, 223, 224, 229, 230, 243, 246, 248, 253, 261, 273, 281, 299, 301, 313, 317, 329, 331, 334, 336, 337, 346].…”

Section: Uwb Lnasupporting

confidence: 75%

“…Based on available articles, WB LNTA was another proposed wideband structure in the 2010s that usually had power dissipation problem [252, 276, 287, 297, 335, 339], compared to the optimum UWB LNAs in Table 3. Studying [161–200, 201–250, 251–300, 301–361] shows that the LNTA idea for wideband applications was not welcomed in the 2010s by engineers; infact, most of the works focussed on WB/UWB LNAs. But note that this issue does not mean that LNTA is a useless idea.…”

Section: Discussionmentioning

confidence: 99%

“…In the 2010s, MOSFET scaling reached 5 nm from 32 nm [30] and many studies [161–200, 201–250, 251–300, 301–361] were carried out by focussing on improving the mentioned topologies and techniques which were presented in the 2000s for wideband LNA. As examples, we can refer to ‘the noise/distortion cancelation topologies’ [164, 167, 173, 181, 189, 192, 194, 195, 201, …”

Section: Uwb Lnamentioning

confidence: 99%

“…Considering the works of 2010s, [161–200, 201–250, 251–300, 301–361] it seems that optimum ultrawideband designs in the BiCMOS, the CMOS and the HEMT technologies are allocated to [305, 337, 345], respectively. In 2017, Ch.…”

Section: Uwb Lnamentioning

confidence: 99%

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Ultrawideband LNA 1960–2019: Review

Shahrabadi

2021

IET Circuits, Devices & Syst

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To the best of the author's knowledge, several studies during 1960-2019 were carried out on wideband and ultrawideband LNAs just to render optimum LNAs for SAW-less Radio-Frequency Integrated Circuits (RFICs) but none of these works reviewed and taught the proceedings of these six decades, hence the lack of a comprehensive review is quite noticeable. This article specifically studies the challenges and solutions of designing UWB LNA by reviewing topologies and techniques such as inductive peaking, noise and distortion cancellation, g m -boosting, active inductor and notch filter. Its historical aspect illustrates when the idea of wideband LNA was born and how it changed to ultrawideband LNA, and its tutorial aspect discusses circuits and achievements to present optimum LNAs in Complementary MOS (CMOS), BiCMOS and High-Electron-Mobility Transistor (HEMT) technologies. This work describes the endeavours of engineers in reaching UWB LNA from narrowband LNA during six decades that have great importance as a chapter in understanding this topic because it teaches all topologies, techniques, circuits and related events in a historical narrative for trained readers who are not experts on this topic. | UWB LNA | In the 1960sWhere did the idea of 'transistorised wideband LNA' originate from? It seems that everything goes back to the 1960s when This is an open access article under the terms of the Creative Commons Attribution License, which permits use, distribution and reproduction in any medium, provided the original work is properly cited.

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Section: Uwb Lnasupporting

confidence: 75%

Section: Discussionmentioning

confidence: 99%

Section: Uwb Lnamentioning

confidence: 99%

Section: Uwb Lnamentioning

confidence: 99%

See 2 more Smart Citations

Ultrawideband LNA 1960–2019: Review

Shahrabadi

2021

IET Circuits, Devices & Syst

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“…These ask the system to have the abilities of automatic test item switching and high-speed measurement. Furthermore, with the development of semiconductor technology, the MMICs' performance, together with their highest operation frequencies and integration level, keep rising [2][3][4][5][6][7][8], which require the automatic system to have stronger abilities. Traditional test systems can either measure partial indicators of the MMICs or try to achieve the whole data by handling many instruments with a complex switch system.…”

Section: Introductionmentioning

confidence: 99%

All-in-One Wafer-Level Solution for MMIC Automatic Testing

et al. 2018

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In this paper, we present an all-in-one wafer-level solution for MMIC (monolithic microwave integrated circuit) automatic testing. The OSL (open short load) two tier de-embedding, the calibration verification model, the accurate PAE (power added efficiency) testing, and the optimized vector cold source NF (noise figure) measurement techniques are integrated in this solution to improve the measurement accuracy. A dual-core topology formed by an IPC (industrial personal computer) and a VNA (vector network analyzer), and an automatic test software based on a three-level driver architecture, are applied to enhance the test efficiency. The benefit from this solution is that all the data of a MMIC can be achieved in only one contact, which shows state-of-the-art accuracy and efficiency.

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A 6–18 GHz bulk CMOS three-stage gain-compensation amplifier for phased-array radar system

Chen

et al. 2023

Microelectronics Journal

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An X-Band Switchless Bidirectional GaN MMIC Amplifier for Phased Array Systems

Cited by 23 publications

References 7 publications

Ultrawideband LNA 1960–2019: Review

Ultrawideband LNA 1960–2019: Review

All-in-One Wafer-Level Solution for MMIC Automatic Testing

A 6–18 GHz bulk CMOS three-stage gain-compensation amplifier for phased-array radar system

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