Analog/RF Performance Investigation of Dopingless FET for Ultra-Low Power Applications

Abstract

In this paper, we investigated the performance of a dopingless (DL) double gate fieldeffect transistor (DL-DGFET) for ultra-low power (ULP) analog/RF applications. It is observed that the source/drain metal electrode workfunction engineering in DL-DGFET yields improved analog/RF performance as compared to underlap inversion mode (IM) and junctionless (JL) DGFETs. The DL-DGFET exhibits superior electrostatic control, low threshold voltage variability, simpler fabrication process, and comparable ON state current as compared to IM-and JL-DGFETs. In addition, the DL-DGFET alleviates the inherent contradictory trade-off between gain and bandwidth by exhibiting the simultaneous improvement in intrinsic voltage gain (A vo ) and unity gain cutoff frequency (f T ). The well calibrated TCAD simulation results of the DL-DGFET show a minimum noise figure (NF min ) 1.27 times and 2.29 times less than the IM and JL-DGFET. At gate overdrive voltage of 0.1 V, the DL-DGFET achieves 5.08 times f T and 5.86 times maximum oscillation frequency (f MAX ) along with 3.59 times A vo in comparison to JL-DGFET. From simulation results, it is evident that the dopingless FET is a promising candidate for ultra-low power applications of analog and radio frequency (RF) domains.INDEX TERMS Charge-plasma, doping-less, transconductance, minimum noise figure, ultra low power (ULP).

Impact of the mole fraction modulation on the RF/DC performance of GaAs1−xSbx FinFET

“…To counteract this impact and ensure the continuation of Moore's law in semiconductor devices, much research has been conducted on innovative device physics and structure with the goal of lowering the operating voltage of the device. [1][2][3][4][5] Although III-V materials such as GaAs, InGaAs, InP, GaAsSb, and InGaSb have gained increasing popularity among material physicists and device engineers in recent years, these materials are particularly attractive to these groups because of their wide range of applications in the area of optical and electrical devices. [6][7][8][9][10] III-V compounds such as BGaAs are extensively used for different applications such as photodetectors, solar cells, and quantum dots due to its tunable direct band gap.…”