Microelectronics Reliability
 1997
DOI: 10.1016/0026-2714(96)00248-x
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Analysis for the reliability of the intrinsic base ion implantation of a 3 Ghz I2L bipolar process from the measure of integrated resistances: From the results, setting of rules for an expert system

J.-L. Loheac
1
,
F. Raoult
2
,
Olivier Bonnaud
3
et al.
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