Analysis of 80-MeV Carbon and 80-MeV Nitrogen Ion Irradiation Effects on N-Channel MOSFETs

Anjum, Arshiya; Pradeep, Thalappil; Vinayakprasanna, N. H.; Pushpa, N.; Tripathi, Ambuj; Prakash, A. P. Gnana

doi:10.1109/tdmr.2019.2945400

Cited by 6 publications

(1 citation statement)

References 31 publications

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“…There are many investigations of the effect of gamma radiation [9,10,23], protons [5,23], and heavy-ions [6,24] but not the effect of X rays on commercial MOSFETs, to the best of our knowledge. Additionally, their ability to be used as dosimeters of X rays has not been investigated, to our knowledge.…”

Section: Introductionmentioning

confidence: 99%

Commercial P-Channel Power VDMOSFET as X-ray Dosimeter

et al. 2022

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The possibility of using commercial p-channel power vertical double-diffused metal-oxide-semiconductor field-effect transistors (VDMOSFETs) as X-ray sensors is investigated in this case study. In this aspect, the dependence of sensitivity on both the gate voltage and the mean energy for three X-ray beams is examined. The eight gate voltages from 0 to 21 V are applied, and the dependence of the sensitivity on the gate voltage is well fitted using the proposed equation. Regarding X-ray energy, the sensitivity first increases and then decreases as a consequence of the behavior of the mass energy-absorption coefficients and is the largest for RQR8 beam. As the mass energy-absorption coefficients of SiO2 are not found in the literature, the mass energy-absorption coefficients of silicon are used. The behavior of irradiated transistors during annealing at room temperature without gate polarization is also considered.

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