Analysis of AlGaN/GaN HEMT and Its Operational Improvement Using a Grated Gate Field Plate

Bhat, Aasif Mohammad; Shafi, Nawaz; Sahu, Chitrakant; Periasamy, C.

doi:10.1007/s11664-021-09151-9

Cited by 17 publications

(5 citation statements)

References 40 publications

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“…However, when the length of the FP reaches a certain length, the electric-field peak does not decrease with the increasing length of the FP [405]. Furthermore, the gate-drain capacitance and switching loos are increased with the GFP length [424]. Karmalkar et al [422] revealed the V BD does not increase with the increasing FP length beyond a certain point, as the field distribution along the 2DEG channel decays beyond the FP edge.…”

Section: Passivation and Fp Engineeringmentioning

confidence: 99%

GaN-based power high-electron-mobility transistors on Si substrates: from materials to devices

Wu¹,

Xing²,

Li³

et al. 2023

Semicond. Sci. Technol.

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Conventional silicon (Si)-based power devices face physical limitations—such as switching speed and energy efficiency—which can make it difficult to meet the increasing demand for high-power, low-loss, and fast-switching-frequency power devices in power electronic converter systems. Gallium nitride (GaN) is an excellent candidate for next-generation power devices, capable of improving the conversion efficiency of power systems owing to its wide band gap, high mobility, and high electric breakdown field. Apart from their cost effectiveness, GaN-based power high-electron-mobility transistors (HEMTs) on Si substrates exhibit excellent properties—such as low ON-resistance and fast switching—and are used primarily in power electronic applications in the fields of consumer electronics, new energy vehicles, and rail transit, amongst others. During the past decade, GaN-on-Si power HEMTs have made major breakthroughs in the development of GaN-based materials and device fabrication. However, the fabrication of GaN-based HEMTs on Si substrates faces various problems—for example, large lattice and thermal mismatches, as well as ‘melt-back etching’ at high temperatures between GaN and Si, and buffer/surface trapping induced leakage current and current collapse. These problems can lead to difficulties in both material growth and device fabrication. In this review, we focused on the current status and progress of GaN-on-Si power HEMTs in terms of both materials and devices. For the materials, we discuss the epitaxial growth of both a complete multilayer HEMT structure, and each functional layer of a HEMT structure on a Si substrate. For the devices, breakthroughs in critical fabrication technology and the related performances of GaN-based power HEMTs are discussed, and the latest development in GaN-based HEMTs are summarised. Based on recent progress, we speculate on the prospects for further development of GaN-based power HEMTs on Si. This review provides a comprehensive understanding of GaN-based HEMTs on Si, aiming to highlight its development in the fields of microelectronics and integrated circuit technology.

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Section: Passivation and Fp Engineeringmentioning

confidence: 99%

GaN-based power high-electron-mobility transistors on Si substrates: from materials to devices

Wu¹,

Xing²,

Li³

et al. 2023

Semicond. Sci. Technol.

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“…The various physical parameters of various materials like silicon, Gallium arsenide, Gallium nitride, Silicon carbide, Gallium oxide and Diamond are depicted in Table I [21]- [23]. The material properties of GaN are very unique and superior to conventional material systems such as a lower intrinsic concentration and therefore lower leakage and noise related problems ensuring a high temperature operation besides higher critical electric field for high power breakdown applications due to its wide bandgap [24], [25]. The higher saturation velocity manifests into higher current capacity.…”

Section: Gan Properties and Hemt Basicsmentioning

confidence: 99%

AlGaN/GaN high electron mobility transistor for various sensing applications: A review

Bhat

Poonia

Varghese

et al. 2023

Micro and Nanostructures

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“…Various field plate (FP) structures in GaN-based HEMTs have been mainly used under high-power conditions. The FP structures redistribute concentrated electric fields at the drain-side gate edge when high voltage is applied, thereby improving the breakdown voltage (

) [ 8 , 9 ]. Additionally, we symmetrically increased the gate-head-top (

) and gate-head-bottom (

) lengths of the AlGaN/GaN HEMT in this study.…”

Section: Introductionmentioning

confidence: 99%

Optimization of Gate-Head-Top/Bottom Lengths of AlGaN/GaN High-Electron-Mobility Transistors with a Gate-Recessed Structure for High-Power Operations: A Simulation Study

Kang,

Choi,

Kim

et al. 2023

Micromachines

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In this study, we propose an optimized AlGaN/GaN high-electron-mobility transistor (HEMT) with a considerably improved breakdown voltage. First, we matched the simulated data obtained from a basic T-gate HEMT with the measured data obtained from the fabricated device to ensure the reliability of the simulation. Thereafter, to improve the breakdown voltage, we suggested applying a gate-head extended structure. The gate-head-top and gate-head-bottom lengths of the basic T-gate HEMT were symmetrically extended by 0.2 μm steps up to 1.0 μm. The breakdown voltage of the 1.0 μm extended structure was 52% higher than that of the basic T-gate HEMT. However, the cutoff frequency (fT) and maximum frequency (fmax) degraded. To minimize the degradation of fT and fmax, we additionally introduced a gate-recessed structure to the 1.0 μm gate-head extended HEMT. The thickness of the 25 nm AlGaN barrier layer was thinned down to 13 nm in 3 nm steps, and the highest fT and fmax were obtained at a 6 nm recessed structure. The fT and fmax of the gate-recessed structure improved by 9% and 28%, respectively, with respect to those of the non-gate-recessed structure, and further improvement of the breakdown voltage by 35% was observed. Consequently, considering the trade-off relationship between the DC and RF characteristics, the 1.0 μm gate-head extended HEMT with the 6 nm gate-recessed structure was found to be the optimized AlGaN/GaN HEMT for high-power operations.

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Analysis of AlGaN/GaN HEMT and Its Operational Improvement Using a Grated Gate Field Plate

Cited by 17 publications

References 40 publications

GaN-based power high-electron-mobility transistors on Si substrates: from materials to devices

GaN-based power high-electron-mobility transistors on Si substrates: from materials to devices

AlGaN/GaN high electron mobility transistor for various sensing applications: A review

Optimization of Gate-Head-Top/Bottom Lengths of AlGaN/GaN High-Electron-Mobility Transistors with a Gate-Recessed Structure for High-Power Operations: A Simulation Study

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