Analysis of Quantized Electrical Characteristics of Microscale TiO&lt;sub&gt;2&lt;/sub&gt; Ink-Jet Printed Memristor

Samardžić, Nataša; Mionić, Marijana; Dakic, Bojan; Hofmann, Heinrich; Dautovic, Stanisa; Stojanović, Goran

doi:10.1109/ted.2015.2421283

Cited by 12 publications

(9 citation statements)

References 45 publications

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“…Many experimental results on resistive switching materials have been interpreted in terms of conduction through atom-sized filamentary structures [ 127 ]. This is the case of a wide variety of binary and ternary oxides such as SiO x [ 128 , 129 , 130 , 131 ], HfO 2 [ 132 , 133 , 134 , 135 , 136 , 137 , 138 , 139 ], Ta 2 O 5 [ 140 , 141 , 142 ], NiO [ 143 , 144 ], ZnO [ 145 , 146 ], a-Si:H [ 147 ], TiO 2 [ 148 ], V 2 O 5 [ 149 ], YO x [ 150 ], and BiVO 4 [ 151 ]. Nonlinear effects in HfO 2 were also reported by Degraeve et al [ 152 ] and in CeO x /SiO 2 -based structures by Miranda et al [ 153 ].…”

Section: Rram Quantum Point Contact Modeling Thermal Effectsmentioning

confidence: 99%

On the Thermal Models for Resistive Random Access Memory Circuit Simulation

et al. 2021

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Resistive Random Access Memories (RRAMs) are based on resistive switching (RS) operation and exhibit a set of technological features that make them ideal candidates for applications related to non-volatile memories, neuromorphic computing and hardware cryptography. For the full industrial development of these devices different simulation tools and compact models are needed in order to allow computer-aided design, both at the device and circuit levels. Most of the different RRAM models presented so far in the literature deal with temperature effects since the physical mechanisms behind RS are thermally activated; therefore, an exhaustive description of these effects is essential. As far as we know, no revision papers on thermal models have been published yet; and that is why we deal with this issue here. Using the heat equation as the starting point, we describe the details of its numerical solution for a conventional RRAM structure and, later on, present models of different complexity to integrate thermal effects in complete compact models that account for the kinetics of the chemical reactions behind resistive switching and the current calculation. In particular, we have accounted for different conductive filament geometries, operation regimes, filament lateral heat losses, the use of several temperatures to characterize each conductive filament, among other issues. A 3D numerical solution of the heat equation within a complete RRAM simulator was also taken into account. A general memristor model is also formulated accounting for temperature as one of the state variables to describe electron device operation. In addition, to widen the view from different perspectives, we deal with a thermal model contextualized within the quantum point contact formalism. In this manner, the temperature can be accounted for the description of quantum effects in the RRAM charge transport mechanisms. Finally, the thermometry of conducting filaments and the corresponding models considering different dielectric materials are tackled in depth.

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Section: Rram Quantum Point Contact Modeling Thermal Effectsmentioning

confidence: 99%

On the Thermal Models for Resistive Random Access Memory Circuit Simulation

et al. 2021

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“…The synthesized nanoparticles are predominantly identied as anatase (JSPDS card #21-1272), while some traces of brookite have also been detected (JSPDS card #29-1360); no rutile (JSPDS card #21-1276) is observed. Anatase is the well suitable TiO 2 polymorph for memristive application that has been demonstrated in a series of theoretical 44 and experimental [45][46][47] studies. The average crystallite size by Scherer's equation was ca.…”

Section: Dielectric Layermentioning

confidence: 97%

“…The prepared lms were dried for 1 day at room temperature, then annealed in an air oven at 200 C for 2 hours, as suggested in previous studies. 40,41…”

Section: Device Outlinementioning

confidence: 99%

Inkjet assisted fabrication of planar biocompatible memristors

et al. 2019

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“…Multi-bit memristive devices, which possess more than two distinctive resistance states, have also been proposed. In 2015, a microscale TiO 2 based memristor with silver and indium tin oxide electrodes was made and proved to have quantised conductance steps that were integer multiples of elementary conductance [132]. Two years later, memory cells with up to 6.5 bits information storage and long-lasting data retention have been developed [133].…”

Section: Memristormentioning

confidence: 99%

Nanotechnology and Nanoscience – From Past Breakthroughs to Future Prospects

Štremfelj

Smole

2021

Informacije MIDEM

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Nanoscience and nanotechnology are already improving our lives in numerous ways. The aim of this paper is to give an insight into the vast array of their potential future uses, as well as current applications, and present the major breakthroughs, which made their development possible. A special section is reserved for the development in the field of microelectronics, which is facing numerous challenges due to the downsizing of devices to the nanometre level. Current situation in microelectronics industry and predictions for the next few years are presented. Furthermore, the use of nanotechnology and future prospects in the fields of medicine, energetics, environmental protection and transport are described. A significant part of this paper is devoted to the field of electronics and information technology, where some potential nanotechnological solutions for the challenges of microelectronics are implied. The use of carbon nanotubes in logic circuits and memory applications is presented. The basic principle of single-electron transistor is also described. Basic concepts of the use of spintronics in magnetoresistive random access memory (MRAM) structures are explained. Memristor is also presented as an important future prospect. In the last part, the investments in nanotechnology and nanoscience under the funding programmes of European Union are presented, followed by some predictions of these fields' future development. However, the review paper focuses only on positive effects of the use of nanotechnology, and thus does not discuss its possible negative impact on public health and environment.

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Analysis of Quantized Electrical Characteristics of Microscale TiO<sub>2</sub> Ink-Jet Printed Memristor

Cited by 12 publications

References 45 publications

On the Thermal Models for Resistive Random Access Memory Circuit Simulation

On the Thermal Models for Resistive Random Access Memory Circuit Simulation

Inkjet assisted fabrication of planar biocompatible memristors

Nanotechnology and Nanoscience – From Past Breakthroughs to Future Prospects

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