Analysis of Relative Intensity Noise Spectra for Uniformly and Chirpily Stacked InAs–InGaAs–GaAs Quantum Dot Lasers

Lin, Gong‐Ru; Tang, Hao‐Ling; Cheng, Hsu-Chieh; Chen, Hung-Lin

doi:10.1109/jlt.2011.2179974

Cited by 14 publications

(12 citation statements)

References 23 publications

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“…The intensity noise properties have been investigated by small signal analysis of the rate equations including individual Langevin noise sources for all the carriers and photon densities. Through evaluation of correlation and auto-correlation coefficients between different noise sources, the value of RIN for a pdoped 1.3µm InAs/GaAs QD laser has been calculated, showing agreement with the experimental results of Lin et al for the uniformly stacked one [26].…”

Section: Introductionsupporting

confidence: 78%

“…7 we have examined the same conditions as their device structure. For instance, the length of the cavity, the number of QD layers and the surface density of QD layers have been assumed as L a =300µm, n=8, and ρ=6×10 14 m -2 respectively, similar to the p-doped QD laser structure grown with uniformly stacked QD layers [26]. It is evident that the level of RIN in p-doped QD laser is in agreement with RIN levels reported in [26].…”

Section: Resultsmentioning

confidence: 72%

“…In order to compare our calculations with the experimental results of Lin et al [26], in Fig. 7 we have examined the same conditions as their device structure.…”

Section: Resultsmentioning

confidence: 99%

“…From modulation and RIN measurements, they concluded that the nonlinearity of gain has a key role in extremely low level RIN in a wide range of frequencies. The first measurements on intensity noise of p-doped QD lasers at 1.3µm wavelength were reported by Lin et al [26]. Their results show an RIN level of -135 to -155dB/Hz over a range of frequencies up to 10 GHz for a p-doped 1.3µm quantum dot laser in which the QD layers were grown with uniformly stacked structure.…”

Section: Introductionmentioning

confidence: 99%

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Theoretical Modeling of Relative Intensity Noise in p-Doped 1.3-μm InAs/GaAs Quantum Dot Lasers

Sanaee

Zarifkar

2015

J. Lightwave Technol.

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Theoretical analysis of relative intensity noise (RIN) characteristics of p-doped QD lasers has been presented. By considering dynamics of electrons and holes separately at GaAs barrier, wetting layer (WL), and three discrete QDs levels, twelve rate equations have been linearized in presence of Langevin noise sources. Calculations indicate that RIN level of QD laser reduces slightly through p-doping. Although providing excess holes to WL state decreases shot noise resulted from quantum confined levels and photon noise, the shot noise originated from three and two dimensional carrier densities, respectively inside the barrier and WL states, increases. It is shown that the RIN level declines in pdoped QD lasers by increasing the injection current which is in agreement with a recent experimental report. It is also demonstrated that the RIN level of QD lasers decreases by increasing the number of QD layers and shot noise plays the main role in this reduction.

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Section: Introductionsupporting

confidence: 78%

Section: Resultsmentioning

confidence: 72%

“…In order to compare our calculations with the experimental results of Lin et al [26], in Fig. 7 we have examined the same conditions as their device structure.…”

Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Theoretical Modeling of Relative Intensity Noise in p-Doped 1.3-μm InAs/GaAs Quantum Dot Lasers

Sanaee

Zarifkar

2015

J. Lightwave Technol.

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“…However, it has to be noted that the shapes of the gain spectra of both lasers may also affect the dynamics. 15,34 To this end, the ES laser under study might be more sensitive to optical feedback also because of a stronger modal competition as compared to the GS laser, which has a rather flat optical spectrum around the central lasing wavelength (not shown here). The different dynamics can also be attributed to the ES degeneracy where the existence of two closely spaced p-levels can lead to more radiative transitions.…”

confidence: 93%

Multimode optical feedback dynamics of InAs/GaAs quantum-dot lasers emitting on different lasing states

et al. 2016

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Quantum dot lasers are envisioned to be the next generation of optical transmitters used for short-reach communication links, owing to their low threshold current and high temperature operation. However, in a context of steady increase in both speed and reach, quantum dot lasers emitting on their upper energy levels have been recently of greater interest as they are touted for their faster modulation dynamics. This work aims at further evaluating the potential impact of such lasers in communication links by characterizing their long-delay optical feedback responses as well as the role of the lasing states on the multimode dynamics of InAs/GaAs quantum-dot Fabry-Perot devices sharing the same design. Results unveil that the excited-state laser shows a much larger sensitivity to optical feedback, with a more complex route to chaos, and a first destabilization point occurring at lower feedback strengths than for a comparable ground-state laser, which remains almost unaffected.

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Physics and Properties of Quantum-Dot Lasers

Dong

2023

Springer Theses

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Analysis of Relative Intensity Noise Spectra for Uniformly and Chirpily Stacked InAs–InGaAs–GaAs Quantum Dot Lasers

Cited by 14 publications

References 23 publications

Theoretical Modeling of Relative Intensity Noise in p-Doped 1.3-μm InAs/GaAs Quantum Dot Lasers

Theoretical Modeling of Relative Intensity Noise in p-Doped 1.3-μm InAs/GaAs Quantum Dot Lasers

Multimode optical feedback dynamics of InAs/GaAs quantum-dot lasers emitting on different lasing states

Physics and Properties of Quantum-Dot Lasers

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