Analysis of the accuracy of several methods for determining the concentration of 11B+ implanted silicon

Atomic spectrometry update. Atomic mass spectrometry

“…A comparison of elastic recoil detection (ERD) using 12 MeV F 4+ ions, nuclear reaction analysis (NRA) based on the 11 B(p, a) 8 Be* reaction and SIMS for samples implanted with 0.3-10 keV 11 B + at a fluence of 10 13 -10 16 ions cm À2 showed that the accuracy of SIMS data strongly depended on the conditions used. 172 Specifically, 500 eV O 2 + oxygen sputtering at an incidence of 601 in the absence of oxygen flooding yielded accurate results within a few %, but 0.7 or 1 keV projectiles at an incidence angle of 451 or 601, respectively, with oxygen flooding gave deviations of up to 20%.…”

Atomic spectrometry update. Industrial analysis: metals, chemicals and advanced materials

“…Duggan and colleagues have compared several techniques for the determination of 11 B + in silicon. 278 Amongst the techniques compared were SIMS, elastic recoil detection (ERD), an ion beam based technique that is useful for quantitative determination of very light ions, that is non-invasive and, on a macro-scale, is not sample destructive; and nuclear reaction analysis (NRA). The accuracy and potential drawbacks of each of the techniques were discussed.…”