Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics

Saura, X.; Suñé, J.; Monaghan, Scott; Hurley, Paul K.; Miranda, E.

doi:10.1063/1.4825321

Cited by 9 publications

(3 citation statements)

References 17 publications

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“…Notice that the estimated curves (black solid lines) are all confined within the 95% confidence bands (shaded area) except for some deviation detected in G for the short distance range. This is merely a consequence of considering the BD spots as mathematical points (recall that typical lateral sizes are about 2 to 3 m) [16]. In addition, notice that g fluctuates around the unity mark, which is indicative of a CSR process at different scales.…”

Section: Analysis Of the Bd Spot Distribution Using 2-d Functionamentioning

confidence: 99%

Study on the spatial generation of breakdown spots in MIM capacitors with different aspect ratios

et al. 2015

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Metal-insulator-metal (MIM) large area (>10-4 cm2) capacitors with different aspect ratios were subjected to severe stress conditions (Eox>4-5 MV/cm) with the aim of generating a large density of breakdown spots (from 105 to 106 spots/cm2) in the same device. The resulting mark pattern on the top metal electrode associated with the failure events was analyzed first using conventional functional estimators for two-dimensional spatial statistics. Second, as a double check, the attention was focused on the same breakdown spot patterns but in relation to the probe point location. In this latter case, the objective was to rule out any stochastic dependence of the breakdown spot distribution on the position of the source of degradation and therefore to confirm whether or not the spots follow a complete spatial randomness (CSR) process. In order to simplify the mathematical treatment of the point-to-event distributions, the voltage probe was assumed to be located at one corner of the observation window which significantly reduces the number of cases to analyze. Infrared images revealed that the generation of the spots is associated with micro-explosions within the insulating material (HfO2) and with the local volatilization of the top metal electrode (Pt).

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Section: Analysis Of the Bd Spot Distribution Using 2-d Functionamentioning

confidence: 99%

Study on the spatial generation of breakdown spots in MIM capacitors with different aspect ratios

et al. 2015

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“…13c, the histogram for the size of the spots considered in the distribution is shown. Figure 13d shows the cumulative distribution function for the nearest-neighbour distance estimator G(r) corresponding to the experimental distribution [9], [19]. The dashed line corresponds to a CSR process.…”

Section: Effects Of Severe Electrical Stressmentioning

confidence: 99%

“…The ultimate consequence of this process is a mark on the top electrode that can be easily detected through an optical microscope [9]. In large area devices, such as the ones investigated in this work, several BD spots of this kind appear, and which can be collectively treated as a point pattern.…”

Section: Introductionmentioning

confidence: 96%

Assessing the Correlation Between Location and Size of Catastrophic Breakdown Events in High-K MIM Capacitors

Muñoz-Gorriz

Blachier

Reimbold

et al. 2019

IEEE Trans. Device Mater. Relib.

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The connection between the spatial location of catastrophic breakdown spots occurring in metal-insulator-metal capacitors with a high-permittivity dielectric film (HfO2) and their respective sizes is investigated. Large area structures (10 4-10 5 µm 2) are used for this correlation assessment since, for statistical considerations, a large number of spots in the same device is imperatively required. The application of ramped or constant voltage stress across the capacitor generates defects inside the dielectric that result in the formation of multiple failure sites. High power dissipation takes place locally leaving a permanent mark on the top electrode of the device. The set of marks constitutes a point pattern with attributes that can be analyzed from a statistical viewpoint. The correlation between the spot locations and their sizes is assessed through the mark correlation function and the method of reverse conditional moments. The study reveals that for severely damaged devices there exists a link between the spot location and size that leads to a short range departure from a complete spatial randomness (CSR) process. It is shown that the affected region around each failure site is actually larger than the visible area of the spot. A structural modification of the dielectric layer in the vicinity of the spot caused by the huge thermal effects occurring just before the microexplosion might be the reason behind this extension of the damage.

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Application of artificial neural networks to the identification of weak electrical regions in large area MIM structures

Muñoz-Gorriz

Monaghan

Cherkaoui

et al. 2021

Microelectronics Reliability

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Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics

Cited by 9 publications

References 17 publications

Study on the spatial generation of breakdown spots in MIM capacitors with different aspect ratios

Study on the spatial generation of breakdown spots in MIM capacitors with different aspect ratios

Assessing the Correlation Between Location and Size of Catastrophic Breakdown Events in High-K MIM Capacitors

Application of artificial neural networks to the identification of weak electrical regions in large area MIM structures

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