J. Synch. Investig.
 2014
DOI: 10.1134/s1027451014040077
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Analysis of the temperature instability of an InAs/GaAs heterostructure during the process of molecular-beam epitaxy

A. V. Katsyuba
1
,
A. A. Velichko
2
,
V. A. Ilyushin
3
et al.
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