Analysis on temperature coefficient of a low-voltage current mirror

Wada, K.; Takano, Mariko; Sekine, Kawori

doi:10.1109/ftfc.2013.6577777

Cited by 2 publications

(1 citation statement)

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“…A current mirror generates a constant reference current at the input side of the mirror circuit and replicates the reference current in its output transistors. One of the main advantages of current mirror is that the currents of transistors at input and output side of the current mirror track each other in case of changes in operating temperature and have low temperature sensitivity [37,[40][41]. Using this concept, the temperature compensation behaviour of our proposed dual current mirror based pressure sensor can be described.…”

Section: Effect Of Temperature On the Output Voltage And Sensitivity mentioning

confidence: 99%

Design and simulation of a novel dual current mirror based CMOS‐MEMS integrated pressure sensor

Kumar

Ropmay

Rathore

et al. 2021

IET Science Measure & Tech

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This paper presents a novel dual current mirror based CMOS circuit for design and development of highly sensitive CMOS-MEMS integrated pressure sensors. The proposed pressure sensing structure has been designed using piezoresistive effect in MOSFETs and 5 μm standard CMOS technology parameters. The proposed structure includes six p-and nchannel MOSFETs and two square silicon diaphragms. MOSFETs MP1 and MN1 are the reference transistors and are placed on the substrate. The pressure sensing MOSFETs MP2 and MP3 are integrated at the mid of fixed edge and at the centre of the diaphragm-1 to sense the maximum tensile and compressive stress developed due to applied pressure. Similarly, the pressure sensing MOSFETs MN2 and MN3 are embedded at the mid of fixed edge and at the centre of the diaphragm-2. COMSOL Multiphysics and LTspice softwares are used for the design and simulation of proposed sensor. The sensitivity of proposed sensor is found to be approximately 7.7 mV/kPa for an input pressure ranging from 0-200 kPa. The output voltage of the sensor has a temperature sensitivity of approximately −0.2 mV/ • C for an operating temperature ranging from −50 to 100 • C at 200 kPa. This CMOS circuit may be an alternative to traditional Wheatstone bridge circuits in future.

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Section: Effect Of Temperature On the Output Voltage And Sensitivity mentioning

confidence: 99%