Analytical electrostatic model of silicon conical field emitters. I

Dvorson, L.; Ding, Meng; Akinwande, Akintunde I.

doi:10.1109/16.892180

Cited by 25 publications

(14 citation statements)

References 20 publications

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“…The electrical field, E, around a paraboloid shaped emitter opposite a gate electrode has been used (Dvorson et al 2001) as the shape of the meniscus can be approximated by a paraboloid, the equation for E is…”

Section: Time Until the First Ejection Of Liquidmentioning

confidence: 99%

Transient electrospray behaviour following high voltage switching

Paine

2008

Microfluid Nanofluid

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Electrosprays routinely create sub-micron droplets containing functional molecules and show promise as a drop-on-demand dispensing method in the life sciences and materials processing. To precisely eject minute liquid volumes electrosprays must be turned on for milliseconds or less in the cone-jet or high-frequency pulsation mode. This work reports sequential phenomena which occur when electrosprays are triggered by sudden voltage steps. For low voltages the electrospray enters the pulsation mode but the pulsation frequency increases towards an asymptote, which increases with voltage. For higher voltages the asymptotic frequency is above a critical value and the electrospray switches to the cone-jet mode; after this the ejection rate increases until finally reaching a steady state. The total delay involves these phenomena plus the delay in forming a liquid cone; the latter depends strongly on both the initial and final voltage. The final electric field that must be applied is smaller when the electric field the liquid is subjected to initially is small-it is proposed that the inertia of a dynamically forming cone plays a role in lowering the voltage needed.

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Section: Time Until the First Ejection Of Liquidmentioning

confidence: 99%

Transient electrospray behaviour following high voltage switching

Paine

2008

Microfluid Nanofluid

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“…Using elementary field emission theory, the emission current can be calculated from supply rate of electrons to the surface and the tunneling probability across the potential barrier [21], [22]. The emission current density J (A/cm 2 ) as a function of field at the surface of the tip F (V/cm), and the work function of tip material, φ (eV), can be approximated in [23] and [24] …”

Section: Device Structure and Designmentioning

confidence: 99%

Toward Amp-Level Field Emission With Large-Area Arrays of Pt-Coated Self-Aligned Gated Nanoscale Tips

Fomani

Guerrera

Velásquez–García

et al. 2014

IEEE Trans. Electron Devices

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Design, fabrication, and characterization of Pt-coated, self-aligned, and gated Si field emission arrays are reported. Arrays of 320 000 tips with 10 µm pitch are employed to emit currents as high as 0.35 A (current density of 1.1 A/cm 2 ) at gate-emitter biases of 300 V. For reliability, the devices have a gate dielectric thicker than 2.5 µm maintaining the field inside gate insulator below 150 V/µm and a 5-nm-thick Pt-coating protecting the tips against sputtering by back-streaming ions. The Pt-coating also increases the capture cross section of electrons from the emitter cone, resulting in higher emission currents compared with uncoated Si tips when the supply of electrons is limited to the surface. The device failure at high currents is associated with plasma ignition due to local pressure rise caused by outgassing of the anode. At lower emission currents, the devices are capable of long-term emission (>3 h) at pressures as high as 10 −5 Torr. Furthermore, a high-yield fabrication process is presented for large-area fabrication of highly-uniform gated tip arrays that could be expanded to active areas larger than 10 cm 2 to increase the emission current.

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“…According to the Bowling Pin Model, 9,10 potential of a cone surrounded by two circular gates is given by According to the Bowling Pin Model, 9,10 potential of a cone surrounded by two circular gates is given by…”

Section: Modelingmentioning

confidence: 99%

Double-gated Spindt emitters with stacked focusing electrode

Dvorson

Akinwande

2002

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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Articles you may be interested inField emission display device structure based on double-gate driving principle for achieving high brightness using a variety of field emission nanoemitters Appl. Phys. Lett. 90, 253105 (2007); 10.1063/1.2747192Beam-focusing characteristics of the diamond-film field emission arrays with parallel emitter, gates, and in-plane lens J.Structural and process characterization of high voltage operated field emission displays with focus electrodes High emission current double-gated field emitter arrays Arrays of molybdenum field emission cones with integrated focusing electrode ͑IFE-FEA͒ were studied as a potential device structure for field emission displays ͑FEDs͒ that achieve high brightness, high luminous efficiency, and longer lifetime, without loss of resolution. Device operation and optimization were examined both qualitatively and analytically. Double-gated devices were fabricated using the Spindt cone process. Extensive electrical characterization of IFE-FEAs was conducted. Preliminary optical measurements demonstrated the desired focusing effect.

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Analytical electrostatic model of silicon conical field emitters. I

Cited by 25 publications

References 20 publications

Transient electrospray behaviour following high voltage switching

Transient electrospray behaviour following high voltage switching

Toward Amp-Level Field Emission With Large-Area Arrays of Pt-Coated Self-Aligned Gated Nanoscale Tips

Double-gated Spindt emitters with stacked focusing electrode

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