Analytical model of three-dimensional effect on voltage and edge peak field distributions and optimal space for planar junction with a single field limiting ring

Modeling of terminal ring structures for high-voltage power MOSFETs

“…The reverse voltage is applied to the cathode N + region, and the anode P + region is grounded. The voltage of the main junction (V m,0 ), the voltage of the ring junction (V f,1 ), the edge peak field of the main junction (E max,m,0 ), and the edge peak field of the ring junction (E max,f,1 ) can be expressed as follows [27]:…”

“…Noted that the total reverse voltage of the single ring structure (BV single ), which is the overall breakdown voltage of the structure, is supported by both the main junction and ring junction, as given by [27] BV single ¼ V m;0 þ V f ;1 : ð7Þ…”