ANALYTICAL MODELS AND ELECTRICAL CHARACTERISATION OF ADVANCED MOSFETs IN THE QUASI BALLISTIC REGIME

Abstract

The quasi-ballistic nature of transport in end of the roadmap MOSFETs device is expected to lead to significant on state current enhancement. The current understanding of such mechanism of transport is carefully reviewed in this chapter, underlining the derivation and limits of corresponding analytical models. In a second part, different strategies to compare these models to experiments are discussed, trying to estimate the “degree of ballisticity” achieved in advanced technologies.