2019
DOI: 10.1039/c9cp04582a
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Angle resolved photoelectron spectroscopy as applied to X-ray mirrors: an in depth study of Mo/Si multilayer systems

Abstract: The chemical composition and extension of interfaces of a multilayer mirror were investigated by means of ARXPS relying on the concept of the EAL.

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Cited by 31 publications
(20 citation statements)
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“…Five different take-off angles (TOA) of photoelectron (i.e., 30°, 45°, 60° and 90°) were adjusted using tilted-specimen holders for the depth profiling AR-XPS analysis, as discussed elsewhere (Sakhonenkov et al, 2019). The symbols of oxidized ( ox ) and metallic (°) species which come from the passive layers and underlying alloy surface of the W-xNb deposits are used hereafter.…”
Section: Methodsmentioning
confidence: 99%
“…Five different take-off angles (TOA) of photoelectron (i.e., 30°, 45°, 60° and 90°) were adjusted using tilted-specimen holders for the depth profiling AR-XPS analysis, as discussed elsewhere (Sakhonenkov et al, 2019). The symbols of oxidized ( ox ) and metallic (°) species which come from the passive layers and underlying alloy surface of the W-xNb deposits are used hereafter.…”
Section: Methodsmentioning
confidence: 99%
“…The selection is based on the optical properties of materials in the given wavelengths range. For example, Mo/Si PMMs are primarily used for the wavelength of 13.5 nm (EUV), and Mo/B and La/B PMMs are excellent for 6.7 nm (BEUV) because boron has lower absorption in this range compared to silicon [20][21][22][23][24]. Co/C PMMs are the most effective for the shorter wavelength range of 4.4-4.5 nm [25].…”
Section: Materials and Designmentioning
confidence: 99%
“…The selection is based on the optical properties of materials in the given wavelengths range. For example, Mo/Si PMMs are primarily used for the wavelength of 13.5 nm (EUV), Mo/B and La/B PMMs are excellent for 6.7 nm (BEUV) since Boron has lower absorption in this range compared to silicon [20][21][22][23][24]. Co/C PMMs are the most effective for the shorter wavelength range of 4.4 -4.5 nm [25].…”
Section: Materials and Designmentioning
confidence: 99%