Angle-resolved photoemission spectroscopy

Zhang, Hongyun; Pincelli, Tommaso; Kondo, Takeshi; Ernstorfer, Ralph; Sato, Takafumi

doi:10.1038/s43586-022-00133-7

Cited by 57 publications

(30 citation statements)

References 292 publications

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“…This combination of k z values is used for the DFT data shown in cyan in panels (b) and (d). This is consistent with the k z broadening with contributions centered around k z = 0 and k = 0.5 often present in ARPES data taken at low mean field path energies in gapped materials. ,, …”

Section: Resultssupporting

confidence: 88%

“…First, the dependence of the inelastic mean free path of the electrons on their kinetic energy is given by the universal curve. , Using photon energies that correspond to a small mean free path is advantageous for probing surface states. However, it can produce prominent k z broadening due to the Heisenberg uncertainty principle − that implies integration of the ARPES signal over k z through the broadening interval. Second, deviations of the photoemission final states from the free electron approximation can cause contributions from different values of k z to appear in the ARPES spectra.…”

Section: Methodsmentioning

confidence: 99%

“…62,63 To This is consistent with the k z broadening with contributions centered around k z = 0 and k = 0.5 often present in ARPES data taken at low mean field path energies in gapped materials. 64,65,81 To account for the presence of surface states, we modeled the CdTe(111)A-(2 × 2) surface reconstruction, 82 Bilayer Interfaces. We begin by probing the local electronic structure at the InSb/α-Sn bilayer interface.…”

Section: ■ Introductionmentioning

confidence: 99%

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First-Principles Assessment of CdTe as a Tunnel Barrier at the α-Sn/InSb Interface

Jardine

Dardzinski

et al. 2023

ACS Appl. Mater. Interfaces

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Majorana zero modes, with prospective applications in topological quantum computing, are expected to arise in superconductor/semiconductor interfaces, such as β-Sn and InSb. However, proximity to the superconductor may also adversely affect the semiconductor's local properties. A tunnel barrier inserted at the interface could resolve this issue. We assess the wide band gap semiconductor, CdTe, as a candidate material to mediate the coupling at the lattice-matched interface between α-Sn and InSb. To this end, we use density functional theory (DFT) with Hubbard U corrections, whose values are machine-learned via Bayesian optimization (BO) [npj Computational Materials 2020, 6, 180]. The results of DFT+U(BO) are validated against angle resolved photoemission spectroscopy (ARPES) experiments for α-Sn and CdTe. For CdTe, the z-unfolding method [Advanced Quantum Technologies 2022, 5, 2100033] is used to resolve the contributions of different k z values to the ARPES. We then study the band offsets and the penetration depth of metal-induced gap states (MIGS) in bilayer interfaces of InSb/α-Sn, InSb/CdTe, and CdTe/α-Sn, as well as in trilayer interfaces of InSb/CdTe/α-Sn with increasing thickness of CdTe. We find that 16 atomic layers (3.5 nm) of CdTe can serve as a tunnel barrier, effectively shielding the InSb from MIGS from the α-Sn. This may guide the choice of dimensions of the CdTe barrier to mediate the coupling in semiconductor−superconductor devices in future Majorana zero modes experiments.

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Section: Resultssupporting

confidence: 88%

Section: Methodsmentioning

confidence: 99%

Section: ■ Introductionmentioning

confidence: 99%

See 1 more Smart Citation

First-Principles Assessment of CdTe as a Tunnel Barrier at the α-Sn/InSb Interface

Jardine

Dardzinski

et al. 2023

ACS Appl. Mater. Interfaces

View full text Add to dashboard Cite

show abstract

“…Using photon energies that correspond to a small mean free path is advantageous for probing surface states. However, it can produce prominent k z broadening due to the Heisenberg uncertainty principle [71][72][73][74][75] that implies integration of the ARPES signal over k z through the broadening interval. Second, deviations of the photoemission final states from the free electron approximation can cause contributions from different values of k z to appear in the ARPES spectra.…”

Section: A Z-unfoldingmentioning

confidence: 99%

First Principles Assessment of CdTe as a Tunnel Barrier at the $\mathbfα$-Sn/InSb Interface

Jardine¹,

Dardzinski²,

Yu³

et al. 2023

Preprint

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Majorana zero modes, with prospective applications in topological quantum computing, are expected to arise in superconductor/semiconductor interfaces, such as β-Sn and InSb. However, proximity to the superconductor may also adversely affect the semiconductor's local properties. A tunnel barrier inserted at the interface could resolve this issue. We assess the wide band gap semiconductor, CdTe, as a candidate material to mediate the coupling at the lattice-matched interface between α-Sn and InSb. To this end, we use density functional theory (DFT) with Hubbard U corrections, whose values are machine-learned via Bayesian optimization (BO) [npj Computational Materials 6, 180 (2020)]. The results of DFT+U(BO) are validated against angle resolved photoemission spectroscopy (ARPES) experiments for α-Sn and CdTe. For CdTe, the z-unfolding method [Advanced Quantum Technologies, 5, 2100033 (2022)] is used to resolve the contributions of different kz values to the ARPES. We then study the band offsets and the penetration depth of metal-induced gap states (MIGS) in bilayer interfaces of InSb/α-Sn, InSb/CdTe, and CdTe/α-Sn, as well as in tri-layer interfaces of InSb/CdTe/α-Sn with increasing thickness of CdTe. We find that 16 atomic layers (3.5 nm) of CdTe can serve as a tunnel barrier, effectively shielding the InSb from MIGS from the α-Sn. This may guide the choice of dimensions of the CdTe barrier to mediate the coupling in semiconductor-superconductor devices in future Majorana zero modes experiments.

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“…Photoelectron spectroscopy is a mature technique that has been used extensively to study the electronic structure of molecules, solids, and atoms. Multiple variants of this technique have emerged over the years, for example, TRPES, 89 angle-resolved photoelectron spectroscopy (ARPES), 90 X-ray photoelectron spectroscopy (XPS). 91 With the emergence of attosecond physics, photoelectron spectroscopy has been used to characterise ultrashort laser pulses rather than to study matter.…”

Section: Time-resolved Spectroscopy and Diffractionmentioning

confidence: 99%

Time-resolved X-ray and XUV based spectroscopic methods for nonadiabatic processes in photochemistry

et al. 2022

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Angle-resolved photoemission spectroscopy

Cited by 57 publications

References 292 publications

First-Principles Assessment of CdTe as a Tunnel Barrier at the α-Sn/InSb Interface

First-Principles Assessment of CdTe as a Tunnel Barrier at the α-Sn/InSb Interface

First Principles Assessment of CdTe as a Tunnel Barrier at the $\mathbfα$-Sn/InSb Interface

Time-resolved X-ray and XUV based spectroscopic methods for nonadiabatic processes in photochemistry

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