Anharmonic effect on first-order Raman modes of p-type 6H-SiC single crystals

Xie, Xuejian; Yan, Peng; Zhang, Fusheng; Wang, Rongkun; Chen, Xiufang; Xu, Xiangang

doi:10.1016/j.jallcom.2016.08.296

Cited by 7 publications

(8 citation statements)

References 26 publications

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“…In contrast, a three-phonon process was the primary aspect in the graphene grown on the SiC substrate from data extracted in this study. Remarkably, studies related to anharmonic effect on SiC crystal showed that three-phonon process played a leading role [ 33 ]. Indeed, the intrinsic linewidth

in a defect-free sample can be attributed to the interactions of electron-phonon and anharmonic phonon-phonon.…”

Section: Resultsmentioning

confidence: 99%

Pinning and Anharmonic Phonon Effect of Quasi-Free-Standing Bilayer Epitaxial Graphene on SiC

et al. 2022

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Epitaxial graphene on SiC without substrate interaction is viewed as one of the most promising two-dimensional (2D) materials in the microelectronics field. In this study, quasi-free-standing bilayer epitaxial graphene (QFSBEG) on SiC was fabricated by H2 intercalation under different time periods, and the temperature-dependent Raman spectra were recorded to evaluate the intrinsic structural difference generated by H2 time duration. The G peak thermal lineshift rates dω/dT showed that the H2 intercalation significantly weakened the pinning effect in epitaxial graphene. Furthermore, the G peak dω/dT value showed a perspicuous pinning effect disparity of QFSBEG samples. Additionally, the anharmonic phonon effect was investigated from the Raman lineshift of peaks. The physical mechanism responsible for dominating the G-mode temperature-dependent behavior among samples with different substrate coupling effects was elucidated. The phonon decay process of different samples was compared as the temperature increased. The evolution from in situ grown graphene to QFSBEG was determined. This study will expand the understanding of QFSBEG and pave a new way for its fabrication.

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in a defect-free sample can be attributed to the interactions of electron-phonon and anharmonic phonon-phonon.…”

Section: Resultsmentioning

confidence: 99%

Pinning and Anharmonic Phonon Effect of Quasi-Free-Standing Bilayer Epitaxial Graphene on SiC

et al. 2022

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“…This is different from the case of optical phonons when sum (decay) processes are more important. Xie et al studied temperature dependences of linewidths of the Raman-active modes in 6H-SiC [6]. We used the FTO(1) mode of E 2 symmetry (studied in [6]) with calculated frequency of ν FTO = 763 cm −1 to compare the temperature dependencies of the phonon line halfwidths for the FTA and FTO phonons.…”

Section: First Principle Consideration Of Phonon Decay Processesmentioning

confidence: 99%

“…Several works were focused at determining phonon lifetimes. It was found that all optically detected folded longitudinal optical (FLO) and folded transverse optical (FTO) phonons have rather short lifetimes (0.9-3.3 ps at room temperature) [2,3,6]. * Author to whom any correspondence should be addressed.…”

Section: Introductionmentioning

confidence: 99%

“…The temperature dependence of Raman linewidth was experimentally examined to reveal information on phonon decay mechanisms for FLO(0), FTO(1/3) and FTO(1) modes [6]. Here and below, we use the same folded phonon mode notations as in [7].…”

Section: Introductionmentioning

confidence: 99%

“…Here and below, we use the same folded phonon mode notations as in [7]. As it was shown by Xie et al for the FLO and FTO modes in aluminum-doped 6H-SiC single crystals, the Raman linewidth broadening with increasing temperature mainly arises due to the anharmonic decay of phonons and the phonon scattering on inhomogeneous impurity distribution [6]. The authors considered a model of anharmonic phonon decay into phonons of equal frequency.…”

Section: Introductionmentioning

confidence: 99%

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Decay processes of long-lived phonons in 6H-SiC

Pshenay-Severin

Adamov

Vinnichenko³

et al. 2023

J. Phys.: Condens. Matter

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Temperature evolution of the high-resolution far-infrared transmission spectra of 6H-SiC single crystal slab is experimentally examined in a temperature range of 5–320 K. Temperature dependences of the phonon lifetimes for long-lived phonons, namely the IR active folded transverse acoustic (FTA) phonon doublet, are determined. These dependences are interpreted in the framework of a theoretical model developed using first principle anharmonic lattice dynamics. It is shown that three-phonon anharmonic processes dominate in the FTA phonon decay at temperatures above 160 K resulting in a rapid decrease of the phonon lifetimes with increasing temperature. Contribution of four-phonon anharmonic processes is negligibly small at temperatures below 320 K.

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Probing the thermally driven response of Raman-active phonon modes in sapphire single crystals by in situ Raman spectroscopy

Tao

Song

2023

Ceramics International

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Anharmonic effect on first-order Raman modes of p-type 6H-SiC single crystals

Cited by 7 publications

References 26 publications

Pinning and Anharmonic Phonon Effect of Quasi-Free-Standing Bilayer Epitaxial Graphene on SiC

Pinning and Anharmonic Phonon Effect of Quasi-Free-Standing Bilayer Epitaxial Graphene on SiC

Decay processes of long-lived phonons in 6H-SiC

Probing the thermally driven response of Raman-active phonon modes in sapphire single crystals by in situ Raman spectroscopy

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