Anisotropic charge transfer and gate tuning for p-SnS/n-MoS<sub>2</sub> vertical van der Waals diodes

Yuan, Hui; Xu, Ruihan; Ren, Jiale; Yang, Jielin; Wang, Shouyang; Tian, Dongwen; Fu, Yingshuang; Li, Quan; Peng, Xiaoniu; Wang, Xina

doi:10.1039/d3nr03508e

Nanoscale

2023

DOI: 10.1039/d3nr03508e

|View full text |Cite

Anisotropic charge transfer and gate tuning for p-SnS/n-MoS₂ vertical van der Waals diodes

Hui Yuan,

Ruihan Xu,

Jiale Ren

et al.

Abstract: 2D material-based van der Waals heterostructures (vdWhs) have shown great potential in the next-generation multi-functional microelectronic devices. Thanks to sharp interface and ultrathin thickness, 2D p-n junctions with high rectification...

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...

Citation Types

Supporting

Mentioning

Contrasting

Year Published

2024

Publication Types

Select...

Article2

Relationship

Self Cite0

Independent2

Authors

Journals

Cited by 2 publications

References 47 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

Facile SILAR deposited SnS/NiS vertical heterojunction for high performance flexible broadband photodetector

Mukherjee,

Reddy,

Badhulika

2024

Optical Materials

View full text Add to dashboard Cite

Facile SILAR deposited SnS/NiS vertical heterojunction for high performance flexible broadband photodetector

Mukherjee,

Reddy,

Badhulika

2024

Optical Materials

View full text Add to dashboard Cite

Reconfigurable spin tunneling diode and giant tunneling magnetoresistance in a symmetric van der Waals double-barrier magnetic tunnel junction

Zhu,

Guo,

Chi

et al. 2024

Phys. Rev. B

View full text Add to dashboard Cite

scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.

Contact Info

customersupport@researchsolutions.com

10624 S. Eastern Ave., Ste. A-614

Henderson, NV 89052, USA

This site is protected by reCAPTCHA and the Google Privacy Policy and Terms of Service apply.

Blog Terms and Conditions API Terms Privacy Policy Contact Cookie Preferences Do Not Sell or Share My Personal Information

Made with 💙 for researchers

Part of the Research Solutions Family.

Anisotropic charge transfer and gate tuning for p-SnS/n-MoS₂ vertical van der Waals diodes

Abstract: 2D material-based van der Waals heterostructures (vdWhs) have shown great potential in the next-generation multi-functional microelectronic devices. Thanks to sharp interface and ultrathin thickness, 2D p-n junctions with high rectification...

Cited by 2 publications

References 47 publications

Facile SILAR deposited SnS/NiS vertical heterojunction for high performance flexible broadband photodetector

Facile SILAR deposited SnS/NiS vertical heterojunction for high performance flexible broadband photodetector

Reconfigurable spin tunneling diode and giant tunneling magnetoresistance in a symmetric van der Waals double-barrier magnetic tunnel junction

Contact Info

Product

Resources

About

Anisotropic charge transfer and gate tuning for p-SnS/n-MoS2 vertical van der Waals diodes

Abstract: 2D material-based van der Waals heterostructures (vdWhs) have shown great potential in the next-generation multi-functional microelectronic devices. Thanks to sharp interface and ultrathin thickness, 2D p-n junctions with high rectification...

Cited by 2 publications

References 47 publications

Facile SILAR deposited SnS/NiS vertical heterojunction for high performance flexible broadband photodetector

Facile SILAR deposited SnS/NiS vertical heterojunction for high performance flexible broadband photodetector

Reconfigurable spin tunneling diode and giant tunneling magnetoresistance in a symmetric van der Waals double-barrier magnetic tunnel junction

Contact Info

Product

Resources

About

Anisotropic charge transfer and gate tuning for p-SnS/n-MoS₂ vertical van der Waals diodes