Anisotropic electrical conduction on ion induced nanorippled CoSi surface

Parida, Basanta Kumar; Kundu, Amitabh; Hazra, Kiran Shankar; Sarkar, Subhendu

doi:10.1007/s00339-021-05117-0

Cited by 7 publications

(2 citation statements)

References 37 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…To ascertain the effect of nanopatterning on the device performance, solar-blind photodetectors (PD) were fabricated on both (bare and rippled) samples by depositing Cr/Au electrodes in the form of strips with an interspacing of 3.5 mm. For nanopatterned surfaces, anisotropy in the electrical conduction with respect to the ripple orientation has been reported before [31,32]. This is often attributed to the conduction channels formed on the surfaces having different conductivities along and across the channels as a result of structural anisotropy.…”

Section: Resultsmentioning

confidence: 94%

Surface nanopatterning of amorphous gallium oxide thin film for enhanced solar-blind photodetection

Kaur¹,

Vashishtha²,

Gupta³

et al. 2022

Nanotechnology

Self Cite

View full text Add to dashboard Cite

Gallium oxide is an ultra-wide band gap semiconductor (Eg > 4.4 eV), best suited intrinsically for the fabrication of solar-blind photodetectors. Apart from its crystalline phases, amorphous Ga2O3 based solar-blind photodetector offer simple and facile growth without the hassle of lattice matching and high temperatures for growth and annealing. However, they often suffer from long response times which hinders any practical use. Herein, we report a simple and cost-effective method to enhance the device performance of amorphous gallium oxide thin film photodetector by nanopatterning the surface using a broad and low energy Ar+ ion beam. The ripples formed on the surface of gallium oxide thin film lead to the formation of anisotropic conduction channels along with an increase in the surface defects. The defects introduced in the system act as recombination centers for the charge carriers bringing about a reduction in the decay time of the devices, even at zero-bias. The fall time of the rippled devices, therefore, reduces, making the devices faster by more than 15 times. This approach of surface modification of gallium oxide provides a one-step, low cost method to enhance the device performance of amorphous thin films which can help in the realization of next-generation optoelectronics.

show abstract

Section: Resultsmentioning

confidence: 94%

Surface nanopatterning of amorphous gallium oxide thin film for enhanced solar-blind photodetection

Kaur¹,

Vashishtha²,

Gupta³

et al. 2022

Nanotechnology

Self Cite

View full text Add to dashboard Cite

show abstract

“…Likewise, ripple patterns have been induced on SiC [174] and SiCo [175,176] surfaces. In the latter case, the rippled surfaces displayed anisotropic electrical conductivity.…”

Section: Ibi Patterning Of Compound Surfacesmentioning

confidence: 98%

Surface nanopatterning by ion beam irradiation: compositional effects

Vazquez

Redondo-Cubero

Lorenz

et al. 2022

J. Phys.: Condens. Matter

View full text Add to dashboard Cite

Surface nanopatterning induced by ion beam irradiation (IBI) has emerged as an effective nanostructuring technique since it induces patterns on large areas of a wide variety of materials, in short time, and at low cost. Nowadays, two main subfields can be distinguished within IBI nanopatterning depending on the irrelevant or relevant role played by the surface composition. In this review, we give an up-dated account of the progress reached when surface composition plays a relevant role, with a main focus on IBI surface patterning with simultaneous co-deposition of foreign atoms. In addition, we also review the advances in IBI of compound surfaces as well as IBI systems where the ion employed is not a noble gas species. In particular, for the IBI with concurrent metal co-deposition, we detail the chronological evolution of these studies because it helps us to clarify some contradictory early reports. We describe the main patterns obtained with this technique as a function of the foreign atom deposition pathway, also focusing in those systematic studies that have contributed to identify the main mechanisms leading to the surface pattern formation and development. Likewise, we explain the main theoretical models aimed at describing these nanopattern formation processes. Finally, we address two main special features of the patterns induced by this technique, namely, the enhanced pattern ordering and the possibility to produce both morphological and chemical patterns.

show abstract

Nanopatterning Induced Si Doping in Amorphous Ga₂O₃ for Enhanced Electrical Properties and Ultra‐Fast Photodetection

Kaur,

Rakhi,

Posti

et al. 2024

Small

View full text Add to dashboard Cite

Ga2O3 has emerged as a promising material for the wide‐bandgap industry aiming at devices beyond the limits of conventional silicon. Amorphous Ga2O3 is widely being used for flexible electronics, but suffers from very high resistivity. Conventional methods of doping like ion implantation require high temperatures post‐processing, thereby limiting their use. Herein, an unconventional method of doping Ga2O3 films with Si, thereby enhancing its electrical properties, is reported. Ion‐beam sputtering (500 eV Ar+) is utilized to nanopattern SiO2‐coated Si substrate leaving the topmost part rich in elemental Si. This helps in enhancing the carrier conduction by increasing n‐type doping of the subsequently coated 5 nm amorphous Ga2O3 films, corroborated by room‐temperature resistivity measurement and valence band spectra, respectively, while the nanopatterns formed help in better light management. Finally, as proof of concept, metal‐semiconductor‐metal (MSM) photoconductor devices fabricated on doped, rippled films show superior properties with responsivity increasing from 6 to 433 mA W−1 while having fast detection speeds of 861 µs/710 µs (rise/fall time) as opposed to non‐rippled devices (377 ms/392 ms). The results demonstrate a facile, cost‐effective, and large‐area method to dope amorphous Ga2O3 films in a bottom‐up approach which may be employed for increasing the electrical conductivity of other amorphous oxide semiconductors as well.

show abstract

Anisotropic electrical conduction on ion induced nanorippled CoSi surface

Cited by 7 publications

References 37 publications

Surface nanopatterning of amorphous gallium oxide thin film for enhanced solar-blind photodetection

Surface nanopatterning of amorphous gallium oxide thin film for enhanced solar-blind photodetection

Surface nanopatterning by ion beam irradiation: compositional effects

Nanopatterning Induced Si Doping in Amorphous Ga₂O₃ for Enhanced Electrical Properties and Ultra‐Fast Photodetection

Contact Info

Product

Resources

About

Anisotropic electrical conduction on ion induced nanorippled CoSi surface

Cited by 7 publications

References 37 publications

Surface nanopatterning of amorphous gallium oxide thin film for enhanced solar-blind photodetection

Surface nanopatterning of amorphous gallium oxide thin film for enhanced solar-blind photodetection

Surface nanopatterning by ion beam irradiation: compositional effects

Nanopatterning Induced Si Doping in Amorphous Ga2O3 for Enhanced Electrical Properties and Ultra‐Fast Photodetection

Contact Info

Product

Resources

About

Nanopatterning Induced Si Doping in Amorphous Ga₂O₃ for Enhanced Electrical Properties and Ultra‐Fast Photodetection