Anisotropic high-field terahertz response of free-standing carbon nanotubes

Lee, Byounghwak; Mousavian, Ali; Paul, M. J.; Thompson, Z.; Stickel, Andrew D.; McCuen, Dalton R.; Jang, Eui Yun; Kim, Yong Hyup; Kyoung, Jisoo; Kim, Dai‐Sik; Lee, Yun-Shik

doi:10.1063/1.4954222

Cited by 23 publications

(3 citation statements)

References 27 publications

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“…[220] the authors patterned periodic array of rectangular apertures on the CNT films with short aperture axis along CNTs www.advopticalmat.de orientation and observed an extraordinary transmission peaks in the THz spectra due to a coupling of the radiation polarized along the CNT alignment to the surface plasmon polaritons. Lee et al [227] studied free standing MW CNTs in high-field THz pulses and found an anisotropy both in linear and in nonlinear effects. Lee et al [227] studied free standing MW CNTs in high-field THz pulses and found an anisotropy both in linear and in nonlinear effects.…”

Section: Thz Response Of Carbon Nanotubesmentioning

confidence: 99%

Terahertz Spectroscopy of Nanomaterials: a Close Look at Charge‐Carrier Transport

Kužel

Němec

2019

Advanced Optical Materials

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Transport of charges is a fundamental process in many high-tech applications including photovoltaic or optoelectronic devices, but also in more ordinary components such as unsophisticated wires and other circuitry. The development of nanotechnologies resulted in the fabrication of highly complex materials consisting of a large variety of nanosized elements, which inevitably involve a multitude of charge transport processes occurring on various time-and length-scales. Figure 1 summarizes the most common nanoelements with high application potential.For example, the electrodes employed in Grätzel solar cells [1] are composed of percolated networks of a huge number of metal oxide nanoparticles (top-left panel in Figure 1). Colloidal nanocrystals form the basis for thin film electronics and flexible electronic devices. [2] The synthetic approaches control their composition, size and electronic structure (energy levels, density of states within the bands and in the bandgap) and the charge-carrier transport. [2,3] Nanowires and nanotubes made of conventional semiconductors are quasi 1D systems combining Terahertz spectroscopy has been used for almost two decades for investigations of nanomaterials, including nanocrystals, nanoparticles, nanowires, nanotubes or 2D crystals. Its great importance stems from the fact that it is a noncontact method and, owing to its high frequency and broadband character, it is capable of characterizing charge transport properties within individual nano-objects but also among them. In addition, probing of photoinitiated ultrafast charge dynamics is possible thanks to the sub-picosecond time resolution. Despite this unprecedented potential, the interpretation of the measured terahertz conductivity spectra in many materials is still intensively debated. Herein is presented a review of the experiments performed on nanostructures of conventional semiconductors and on carbon nanomaterials (graphene and carbon nanotubes) during the past decade. The state of the art of the theoretical formalism is provided and discussed, including the intrinsic response, as well as the role of inherent heterogeneity and of the experimental conditions.

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Section: Thz Response Of Carbon Nanotubesmentioning

confidence: 99%

Terahertz Spectroscopy of Nanomaterials: a Close Look at Charge‐Carrier Transport

Kužel

Němec

2019

Advanced Optical Materials

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“…Recently, network films consisting of nanomaterials such as single-walled nanotubes (SWNTs), graphene, reduced graphene oxide, and silver nanowires (AgNWs) have emerged as a potential platform for optoelectronic devices 17 – 22 . Solution-based processes allow us to use relatively low-cost methods of spin-coating, roll-to-roll processing, and printing.…”

Section: Introductionmentioning

confidence: 99%

Enhanced sensitivity in THz plasmonic sensors with silver nanowires

Hong

Jun

et al. 2018

Sci Rep

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We developed hybrid slot antenna structures for microbial sensing in the THz frequency range, where silver nanowires (AgNWs) were employed to increase the sensitivity. In order to fabricate the hybrid devices, we partially etched the AgNW in the slot antenna region, where we can expect the field enhancement effect at the AgNW tip. We measured the resonant-frequency shift observed upon the deposition of a polymer layer, and observed that the sensitivity increased upon the introduction of AgNWs, with an enhancement factor of more than four times (approximately six times in terms of figure-of-merit). The sensitivity increased with the AgNW density until saturation. In addition, we tested devices with PRD1 viruses, and obtained an enhancement factor of 3.4 for a slot antenna width of 3 μm. Furthermore, we performed finite-difference time-domain simulations, which confirmed the experimental results. The sensitivity enhancement factor decreased with the decrease of the slot width, consistent with the experimental findings. Two-dimensional mapping of the electric field confirmed the strong field localization and enhancement at the AgNW tips.

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“…15 THz-TDS systems are powerful tools for material spectroscopy, layer inspection, and transmission imaging of packaged objects. 16 These capabilities of THz-TDS systems are utilized in authentication, [17][18][19] nondestructive inspection of composite materials, [20][21][22][23][24][25][26][27][28] threedimensional imaging, [29][30][31][32] metrology and quality control of industrial products, [33][34][35][36][37] detection of concealed weapons, [38][39][40][41][42][43][44][45] art investigations, 46,47 tomography, [48][49][50][51][52] biomedical diagnosis, [53][54][55][56] material characterization, [57][58][59][60][61][62] thickness measurement, …”

Section: Introductionmentioning

confidence: 99%

Review of GaN-based devices for terahertz operation

Ahi

2017

Opt. Eng

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Abstract. GaN provides the highest electron saturation velocity, breakdown voltage, operation temperature, and thus the highest combined frequency-power performance among commonly used semiconductors. The industrial need for compact, economical, high-resolution, and high-power terahertz (THz) imaging and spectroscopy systems are promoting the utilization of GaN for implementing the next generation of THz systems. As it is reviewed, the mentioned characteristics of GaN together with its capabilities of providing high two-dimensional election densities and large longitudinal optical phonon of ∼90 meV make it one of the most promising semiconductor materials for the future of the THz emitters, detectors, mixers, and frequency multiplicators. GaNbased devices have shown capabilities of operation in the upper THz frequency band of 5 to 12 THz with relatively high photon densities in room temperature. As a result, THz imaging and spectroscopy systems with high resolution and deep depth of penetration can be realized through utilizing GaN-based devices. A comprehensive review of the history and the state of the art of GaN-based electronic devices, including plasma heterostructure field-effect transistors, negative differential resistances, hetero-dimensional Schottky diodes, impact avalanche transit times, quantum-cascade lasers, high electron mobility transistors, Gunn diodes, and tera field-effect transistors together with their impact on the future of THz imaging and spectroscopy systems is provided.

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Anisotropic high-field terahertz response of free-standing carbon nanotubes

Cited by 23 publications

References 27 publications

Terahertz Spectroscopy of Nanomaterials: a Close Look at Charge‐Carrier Transport

Terahertz Spectroscopy of Nanomaterials: a Close Look at Charge‐Carrier Transport

Enhanced sensitivity in THz plasmonic sensors with silver nanowires

Review of GaN-based devices for terahertz operation

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