Anisotropic optical absorption induced by Rashba spin-orbit coupling in monolayer phosphorene

Li, Yuan; Li, Xin; Wan, Qi Xin; Bai, Ru; Wen, ZhengCheng

doi:10.1016/j.physe.2017.12.022

Cited by 9 publications

(6 citation statements)

References 18 publications

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“…The advent of graphene in 2004 accelerated the development of other 2D materials, including phosphorene, transition-metal dichalcogenides (TMDs), boron nitride (BN), and silicene. But these 2D nonpolar semiconductors lack the intrinsic Rashba effect, such as phosphorene and transition-metal dichalcogenides (TMDs). , Although the external electric field and interfacial effect can break the out-of-plane symmetry in nonpolar structures and thus induce the Rashba effect, 2D polar semiconductors with the intrinsic Rashba effect merit further investigation. However, 2D SOC semiconductors have not been comprehensively summarized in previous studies.…”

Section: Origin Of Rashba and Dresselhaus Effects In 2d Electron Gasmentioning

confidence: 99%

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Spin–Orbit Coupling in 2D Semiconductors: A Theoretical Perspective

Chen

et al. 2021

J. Phys. Chem. Lett.

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This theoretical Perspective reviews spin−orbit coupling (SOC), including the Rashba effect and Dresselhaus effect, in two-dimensional (2D) semiconductors. We first introduce the origin of the Rashba effect and Dresselhaus effect using the Hamiltonian models; we then summarize 2D Rashba semiconductors predicted by first-principles density functional theory (DFT) calculations, including AB binary monolayers, Janus monolayers, 2D perovskites, and so on. We also review various manipulating techniques of the Rashba effect on 2D semiconductors, such as external electric field, strain engineering, charge doping, interlayer interactions, proximity effect of substrates, and external magnetic field. We then briefly summarize the applications of SOC, including the generation, detection, and manipulation of spin currents in spin Hall effect transistors and spin field effect transistors. Finally, we conclude this Perspective and propose three promising research fields of SOC in low-dimensional semiconductors, including the nonlinear SOC Hamiltonian model, 2D ferroelectric SOC semiconductors, and 1D Rashba model and semiconductors. This theoretical Perspective enriches the fundamental understanding of SOC in 2D semiconductors and will help in the design of new types of spintronic devices in future experiments.

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Section: Origin Of Rashba and Dresselhaus Effects In 2d Electron Gasmentioning

confidence: 99%

“…But these 2D nonpolar semiconductors lack the intrinsic Rashba effect, such as phosphorene and transitionmetal dichalcogenides (TMDs). 28,29 Although the external electric field 12 and interfacial effect 30 merit further investigation. However, 2D SOC semiconductors have not been comprehensively summarized in previous studies.…”

mentioning

confidence: 99%

Spin–Orbit Coupling in 2D Semiconductors: A Theoretical Perspective

Chen

et al. 2021

J. Phys. Chem. Lett.

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“…Regarding light absorption, optical selection rules render the extinction coefficient along armchair higher by 20% with respect to that in the zigzag direction. [160,161] Phosphorene also shows anisotropic properties in its complex refractive indices in the spectral range between 480 and 650 nm, as easily obtained from anisotropic optical contrast spectra elaborated with the Fresnel equation, [162] giving to phosphorene the light modulation properties of linear polarizers, phase plates and optical compensators. This allows to easily integrate phosphorene into multilayer structures such as photonic crystals and microcavities [163,164] which can be applied as optoelectronic components with switching, filtering and tailored emissive properties.…”

Section: General Opto-electronic Propertiesmentioning

confidence: 93%

“…Thanks to its crystalline structure, phosphorene shows also optical anisotropy that is correlated with the in‐plane electrical anisotropy. Regarding light absorption, optical selection rules render the extinction coefficient along armchair higher by 20 % with respect to that in the zigzag direction , …”

Section: 2d Bp Applications In Optoelectronics Photonics and Photmentioning

confidence: 99%

A Perspective on Recent Advances in Phosphorene Functionalization and Its Applications in Devices

et al. 2018

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Phosphorene, the 2D material derived from black phosphorus, has recently attracted a lot of interest for its properties, suitable for applications in materials science. The physical features and the prominent chemical reactivity on its surface render this nanolayered substrate particularly promising for electrical and optoelectronic applications. In addition, being a new potential ligand for metals, it opens the way for a new role of the inorganic chemistry in the 2D world, with special reference to the field of catalysis. The aim of this review is to summarize the state of the art in this subject and to present our most recent results in the preparation, functionalization, and use of phosphorene and its decorated derivatives. We discuss several key points, which are currently under investigation: the synthesis, the characterization by theoretical calculations, the high pressure behavior of black phosphorus, as well as its decoration with nanoparticles and encapsulation in polymers. Finally, device fabrication and electrical transport measurements are overviewed on the basis of recent literature and the new results collected in our laboratories.

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“…Анизотропное оптическое поглощение в монослое фосфорена с учетом спин-орбитального взаимодействия Рашбы теоретически исследовано в [13]. Проведен численный расчет оптического поглощения электронами.…”

Section: Introductionunclassified

Резонансное Поглощение Электромагнитного Излучения В Монослое Фосфорена

Карпунин¹,

Маргулис²

2019

Журнал Технической Физики

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The absorption coefficient of the electromagnetic radiation in a phosphorene single layer placed in a magnetic field is found. A degenerate and nondegenerate electron gas is considered. The resonant dependences of the absorptance on the radiation frequency and applied magnetic field are found. Taking into account electron scattering at an ionized impurity leads to oscillation dependences of the absorption coefficient on the radiation frequency and external magnetic field. The resonance character of the absorption curve is shown. The conditions of resonances and position of resonance peaks are found.

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Anisotropic optical absorption induced by Rashba spin-orbit coupling in monolayer phosphorene

Cited by 9 publications

References 18 publications

Spin–Orbit Coupling in 2D Semiconductors: A Theoretical Perspective

Spin–Orbit Coupling in 2D Semiconductors: A Theoretical Perspective

A Perspective on Recent Advances in Phosphorene Functionalization and Its Applications in Devices

Резонансное Поглощение Электромагнитного Излучения В Монослое Фосфорена

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