be adjusted by the end-user at will. Strain engineering in conventional 3D materials, in contrast, typically relies on forcing the epitaxial growth of a material onto a substrate with a given lattice parameter mismatch, providing a fixed strain that cannot be adjusted after growth. Among the different strategies to strain engineer 2D materials, the application of uniaxial strain through bending flexible substrates with a bending jig apparatus is one of the most popular approaches. [1,11,12,[15][16][17][18] This method presents some issues when applied to 2D materials with in-plane anisotropic properties. Indeed, the effect of uniaxial strain along different crystal orientations is expected to modify the properties of these anisotropic 2Ds differently. Despite the recent interest on these families of anisotropic 2D materials, [19][20][21][22][23][24][25][26] the number of reported research works focused on studying the effect of strain along different crystal directions is still very scarce and primarily focused on the investigation of strain tunable Raman modes in black phosphorus, PdSe 2 , or tellurium. [27][28][29][30][31] The group IV-V transition metal trichalcogenides (TMTCs) are a less-explored family of materials with quasi-1D electrical and optical properties stemming from a reduced in-plane structural symmetry. [24,[32][33][34] These materials have a general formula of MX 3 being M a transition metal atomThe effect of uniaxial strain on the band structure of ZrSe 3 , a semiconducting material with a marked in-plane structural anisotropy, is studied. By using a modified three-point bending test apparatus, thin ZrSe 3 flakes are subjected to uniaxial strain along different crystalline orientations monitoring the effect of strain on their optical properties through micro-reflectance spectroscopy. The obtained spectra show excitonic features that blueshift upon uniaxial tension. This shift is strongly dependent on the direction along which the strain is being applied. When the flakes are strained along the b-axis, the exciton peak shifts at ≈60-95 meV % −1 , while along the a-axis, the shift only reaches ≈0-15 meV % −1 . Ab initio calculations are conducted to study the influence of uniaxial strain, applied along different crystal directions, on the band structure and reflectance spectra of ZrSe 3 , exhibiting a remarkable agreement with the experimental results.