Annealing effect on the structural, opto‐electronic and photoluminescence properties of sprayed Zn_0.76Mg_0.24O films for application in solar cells

Abstract

In recent years, Zn 1Àx Mg x O has attracted the attention of many researchers as its physical behaviour can be suitably controlled by varying the Zn/Mg ratio. The superior advantages associated with Zn 1Àx Mg x O make this material as a potential candidate for application in Cu(InGa)Se 2 -based solar cells. In the present investigation, Zn 1Àx Mg x O films have been prepared by spray pyrolysis at 300 8C and subsequently annealed in argon and oxygen ambience at temperatures that vary in the range, 100-500 8C. The changes occurred in the physical characteristics of the layers as a function of annealing temperature have been studied. The influence of annealing on the structure, topography, opto-electronic and photoluminescence properties was found to be significant. The results have been presented and discussed.